Datasheet > VS-VSKH250-08PBF

VS-VSKH250-08PBF

更新时间： 2024-12-01 22:55:15

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
12页	268K
描述
MODULE DIODE 250A MAGN-A-PAK

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VS-VSKH250-08PBF 数据手册

VS-VSK.170PbF, VS-VSK.250PbF Series

www.vishay.com

Vishay Semiconductors

SCR/SCR and SCR/Diode

(MAGN-A-PAK Power Modules), 170 A, 250 A

FEATURES

• High voltage

• Electrically isolated base plate

• 3500 V_RMSisolating voltage

• Industrial standard package

• Simplified mechanical designs, rapid assembly

• High surge capability

• Large creepage distances

• UL approved file E78996

• Designed and qualified for industrial level

MAGN-A-PAK

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

DESCRIPTION

PRIMARY CHARACTERISTICS

This VSK series of MAGN-A-PAK modules uses high voltage

power thyristor/thyristor and thyristor/diode in seven basic

configurations. The semiconductors are electrically isolated

from the metal base, allowing common heatsinks and

compact assemblies to be built. They can be interconnected

to form single phase or three phase bridges or as

AC-switches when modules are connected in anti-parallel

mode. These modules are intended for general purpose

applications such as battery chargers, welders, motor

drives, UPS, etc.

I_T(AV)

170 A, 250 A

Modules - thyristor, standard

MAGN-A-PAK

Type

Package

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL

CHARACTERISTICS

VSK.170..

170

VSK.250..

250

UNITS

I_T(AV)

85 °C

I_T(RMS)

377

555

50 Hz

60 Hz

50 Hz

60 Hz

5100

8500

I_TSM

5350

8900

131

361

I²t

kA²s

119

330

I²t

1310

3610

kA²s

V_DRM/V_RRM

400 to 1600

400 to 2000

T_J

Range

-40 to +130

°C

Revision: 12-Nov-2018

Document Number: 94417

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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