Datasheet > VS-VSKD166/08PBF

VS-VSKD166/08PBF

更新时间： 2024-02-08 06:02:17

品牌	Logo	应用领域
威世 - VISHAY		二极管
页数	文件大小	规格书
13页	271K
描述
RECTIFIER DIODE

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中文翻译

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技术参数
数据手册

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VS-VSKD166/08PBF 技术参数

是否无铅：	不含铅	生命周期：	Active
Reach Compliance Code：	unknown	风险等级：	5.72
二极管类型：	RECTIFIER DIODE	湿度敏感等级：	NOT SPECIFIED
峰值回流温度（摄氏度）：	NOT SPECIFIED	端子面层：	NOT SPECIFIED
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

VS-VSKD166/08PBF 数据手册

VS-VSK.166..PbF, VS-VSK.196..PbF, VS-VSK.236..PbF Series

www.vishay.com

Vishay Semiconductors

4500

4000

3500

3000

2500

2000

1500

1000

5000

At any rated load condition and with

rated V_RRMapplied following surge.

Initial T_J= 150 °C

Maximum non-repetitive surge current

versus pulse train duration.

Initial T_J= 150 °C

4500

4000

3500

3000

2500

2000

1500

1000

at 60 Hz 0.0083 s

at 50 Hz 0.0100 s

No voltage reapplied

Rated V_RRMreapplied

VSK.196.. Series

100

0.01

0.1

1.0

Number of Equal Amplitude Half

Cycle Current Pulses (N)

Pulse Train Duration (s)

Fig. 14 - Maximum Non-Repetitive Surge Current

Fig. 15 - Maximum Non-Repetitive Surge Current

350

300

250

200

150

100

300

250

200

150

100

VSK.196.. Series

Per junction

T_J= 150 °C

100

150

200

250

300

100

125

150

Total RMS Output Current (A)

Maximum Allowable Ambient Temperature (°C)

Fig. 16 - On-State Power Loss Characteristics

1200

1000

800

600

400

200

1200

1000

800

180°

(Sine)

180°

(Rect)

600

400

2 x VSK.196.. Series

Single phase bridge

Connected

200

T_J= 150 °C

125

100

200

300

400

100

150

Maximum Allowable Ambient Temperature (°C)

Total Output Current (A)

Fig. 17 - On-State Power Loss Characteristics

Revision: 10-Apr-14

Document Number: 94357

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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