5秒后页面跳转
VS-VSKD166/08PBF PDF预览

VS-VSKD166/08PBF

更新时间: 2024-01-10 03:16:01
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
13页 271K
描述
RECTIFIER DIODE

VS-VSKD166/08PBF 技术参数

是否无铅: 不含铅生命周期:Active
Reach Compliance Code:unknown风险等级:5.72
二极管类型:RECTIFIER DIODE湿度敏感等级:NOT SPECIFIED
峰值回流温度(摄氏度):NOT SPECIFIED端子面层:NOT SPECIFIED
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

VS-VSKD166/08PBF 数据手册

 浏览型号VS-VSKD166/08PBF的Datasheet PDF文件第1页浏览型号VS-VSKD166/08PBF的Datasheet PDF文件第2页浏览型号VS-VSKD166/08PBF的Datasheet PDF文件第4页浏览型号VS-VSKD166/08PBF的Datasheet PDF文件第5页浏览型号VS-VSKD166/08PBF的Datasheet PDF文件第6页浏览型号VS-VSKD166/08PBF的Datasheet PDF文件第7页 
VS-VSK.166..PbF, VS-VSK.196..PbF, VS-VSK.236..PbF Series  
www.vishay.com  
Vishay Semiconductors  
R CONDUCTION PER JUNCTION  
SINUSOIDAL CONDUCTION  
AT TJ MAXIMUM  
RECTANGULAR CONDUCTION  
AT TJ MAXIMUM  
DEVICES  
UNITS  
180°  
0.025  
0.016  
0.009  
120°  
90°  
60°  
30°  
180°  
0.018  
0.012  
0.008  
120°  
0.031  
0.02  
90°  
60°  
30°  
VSK.166  
VSK.196  
VSK.236  
0.03  
0.019  
0.010  
0.038  
0.024  
0.014  
0.055  
0.034  
0.018  
0.089  
0.053  
0.025  
0.041  
0.026  
0.015  
0.057  
0.035  
0.019  
0.089  
0.054  
0.025  
K/W  
0.012  
Note  
Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC  
150  
140  
130  
120  
110  
100  
90  
250  
200  
150  
100  
50  
VSK.166.. Series  
thJC (DC) = 0.20 K/W  
180°  
120°  
90°  
60°  
30°  
R
Ø
Conduction angle  
RMS limit  
Ø
30°  
Conduction angle  
60°  
90°  
VSK.166.. Series  
TJ = 150 °C  
120°  
80  
180°  
0
70  
0
40  
80  
120  
160  
200  
0
40  
80  
120  
160  
200  
Average Forward Current (A)  
Average Forward Current (A)  
Fig. 1 - Current Ratings Characteristics  
Fig. 3 - On-State Power Loss Characteristics  
150  
140  
130  
120  
110  
100  
90  
300  
250  
200  
150  
100  
50  
DC  
180°  
120°  
90°  
60°  
30°  
VSK.166.. Series  
RthJC (DC) = 0.20 K/W  
RMS limit  
Ø
Conduction period  
30°  
Ø
60°  
Conduction period  
90°  
VSK.166.. Series  
Per junction  
TJ = 150 °C  
120°  
80  
180°  
DC  
250  
0
70  
0
50  
100  
150  
200  
250  
300  
0
50  
100  
150  
200  
300  
Average Forward Current (A)  
Fig. 4 - On-State Power Loss Characteristics  
Average Forward Current (A)  
Fig. 2 - Current Ratings Characteristics  
Revision: 10-Apr-14  
Document Number: 94357  
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

与VS-VSKD166/08PBF相关器件

型号 品牌 获取价格 描述 数据表
VS-VSKD1668PBF VISHAY

获取价格

Rectifier Diode,
VS-VSKD196/04PBF VISHAY

获取价格

RECTIFIER DIODE
VS-VSKD196/08PBF VISHAY

获取价格

DIODE GEN 800V 97.5A INTAPAK
VS-VSKD196/12PBF VISHAY

获取价格

RECTIFIER DIODE
VS-VSKD196/16PBF VISHAY

获取价格

RECTIFIER DIODE
VS-VSKD19604PBF VISHAY

获取价格

Rectifier Diode, 1 Phase, 2 Element, 195A, 400V V(RRM), Silicon, ROHS COMPLIANT, INT-A-PAK
VS-VSKD19612PBF VISHAY

获取价格

Rectifier Diode, 1 Phase, 2 Element, 195A, 1200V V(RRM), Silicon, ROHS COMPLIANT, INT-A-PA
VS-VSKD19616PBF VISHAY

获取价格

Rectifier Diode, 1 Phase, 2 Element, 195A, 1600V V(RRM), Silicon, ROHS COMPLIANT, INT-A-PA
VS-VSKD1964PBF VISHAY

获取价格

Rectifier Diode,
VS-VSKD1968PBF VISHAY

获取价格

Rectifier Diode,