Datasheet > VS-ST333S08PFL0P

VS-ST333S08PFL0P

更新时间： 2024-11-21 14:45:35

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
10页	1369K
描述
Silicon Controlled Rectifier,

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中文翻译

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技术参数
数据手册

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VS-ST333S08PFL0P 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	unknown
ECCN代码：	EAR99	Factory Lead Time：	18 weeks
风险等级：	5.69	Is Samacsys：	N
峰值回流温度（摄氏度）：	NOT SPECIFIED	处于峰值回流温度下的最长时间：	NOT SPECIFIED
触发设备类型：	SCR	Base Number Matches：	1

VS-ST333S08PFL0P 数据手册

VS-ST333SP Series

Vishay Semiconductors

www.vishay.com

Inverter Grade Thyristors

(Stud Version), 330 A

FEATURES

• Center amplifying gate

• High surge current capability

• Low thermal impedance

• High speed performance

• Compression bonding

• Designed and qualified for industrial level

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

TO-209AE (TO-118)

TYPICAL APPLICATIONS

• Inverters

• Choppers

PRODUCT SUMMARY

I_T(AV)

_DRM/V_RRM

V_TM

330 A

400 V, 2000 V

1.96 V

• Induction heating

• All types of force-commutated converters



_TSMat 50 Hz

_TSMat 60 Hz

I_GT

11 000 A

11 520 A

200 mA

T_J

-40 °C to 125 °C

TO-209AE (TO-118)

Single SCR

Package

Diode variation

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER

TEST CONDITIONS

VALUES

330

UNITS

I_T(AV)

T_C

°C

I_T(RMS)

518

50 Hz

60 Hz

50 Hz

60 Hz

11 000

11 520

605

I_TSM

I²t

kA²s

550

V_DRM/V_RRM

400 to 800

t_q

μs

°C

T_J

-40 to 125

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

V_DRM/V_RRM, MAXIMUM REPETITIVE V_RSM, MAXIMUM NON-REPETITIVE I_DRM/I_RRMMAXIMUM AT

VOLTAGE

CODE

TYPE NUMBER

PEAK VOLTAGE

T_J= T_JMAXIMUM

400

800

500

900

VS-ST333S

Revision: 12-Mar-14

Document Number: 94377

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...10

中文翻译

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