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VS-SD203N04S10MSV PDF预览

VS-SD203N04S10MSV

更新时间: 2024-11-18 14:45:35
品牌 Logo 应用领域
威世 - VISHAY 软恢复二极管快速软恢复二极管高压大功率快速软恢复电源高压大电源高功率电源
页数 文件大小 规格书
10页 279K
描述
Rectifier Diode, 1 Phase, 1 Element, 200A, 400V V(RRM), Silicon, DO-205AB, DO-9, 1 PIN

VS-SD203N04S10MSV 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:DO-9, 1 PINReach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.71其他特性:FREE WHEELING DIODE, SNUBBER DIODE
应用:HIGH VOLTAGE HIGH POWER FAST SOFT RECOVERY外壳连接:CATHODE
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.65 V
JEDEC-95代码:DO-205ABJESD-30 代码:O-MUPM-H1
最大非重复峰值正向电流:5230 A元件数量:1
相数:1端子数量:1
最高工作温度:125 °C最低工作温度:-40 °C
最大输出电流:200 A封装主体材料:METAL
封装形状:ROUND封装形式:POST/STUD MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED最大重复峰值反向电压:400 V
最大反向电流:35000 µA最大反向恢复时间:1 µs
表面贴装:NO端子形式:HIGH CURRENT CABLE
端子位置:UPPER处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

VS-SD203N04S10MSV 数据手册

 浏览型号VS-SD203N04S10MSV的Datasheet PDF文件第2页浏览型号VS-SD203N04S10MSV的Datasheet PDF文件第3页浏览型号VS-SD203N04S10MSV的Datasheet PDF文件第4页浏览型号VS-SD203N04S10MSV的Datasheet PDF文件第5页浏览型号VS-SD203N04S10MSV的Datasheet PDF文件第6页浏览型号VS-SD203N04S10MSV的Datasheet PDF文件第7页 
VS-SD203N/R Series  
Vishay Semiconductors  
www.vishay.com  
Fast Recovery Diodes  
(Stud Version) 200 A  
FEATURES  
• High power fast recovery diode series  
• 1.0 μs to 2.0 μs recovery time  
• High voltage ratings up to 2500 V  
• High current capability  
• Optimized turn-on and turn-off characteristics  
• Low forward recovery  
• Fast and soft reverse recovery  
DO-205AB (DO-9)  
• Compression bonded encapsulation  
• Stud version JEDEC® DO-205AB (DO-9)  
• Maximum junction temperature 125 °C  
• Designed and qualified for industrial level  
• Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
PRODUCT SUMMARY  
IF(AV)  
200 A  
Package  
DO-205AB (DO-9)  
Single diode  
TYPICAL APPLICATIONS  
• Snubber diode for GTO  
Circuit configuration  
• High voltage freewheeling diode  
• Fast recovery rectifier applications  
MAJOR RATINGS AND CHARACTERISTICS  
PARAMETER  
TEST CONDITIONS  
VALUES  
200  
UNITS  
A
IF(AV)  
TC  
85  
°C  
IF(RMS)  
314  
50 Hz  
60 Hz  
50 Hz  
60 Hz  
Range  
Range  
TJ  
4990  
A
IFSM  
5230  
125  
I2t  
kA2s  
114  
VRRM  
trr  
400 to 2500  
1.0 to 2.0  
25  
V
μs  
°C  
TJ  
-40 to +125  
Revision: 21-Nov-13  
Document Number: 93170  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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