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VS-65APS12L-M3 PDF预览

VS-65APS12L-M3

更新时间: 2024-02-04 08:56:20
品牌 Logo 应用领域
威世 - VISHAY 局域网高压测试二极管
页数 文件大小 规格书
7页 199K
描述
Rectifier Diode,

VS-65APS12L-M3 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:unknownFactory Lead Time:16 weeks
风险等级:1.63应用:HIGH VOLTAGE
外壳连接:CATHODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.12 VJEDEC-95代码:TO-247AD
JESD-30 代码:R-PSFM-T3最大非重复峰值正向电流:1000 A
元件数量:1相数:1
端子数量:3最高工作温度:150 °C
最低工作温度:-40 °C最大输出电流:65 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT最大重复峰值反向电压:1200 V
最大反向电流:100 µA反向测试电压:1200 V
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLEBase Number Matches:1

VS-65APS12L-M3 数据手册

 浏览型号VS-65APS12L-M3的Datasheet PDF文件第1页浏览型号VS-65APS12L-M3的Datasheet PDF文件第2页浏览型号VS-65APS12L-M3的Datasheet PDF文件第4页浏览型号VS-65APS12L-M3的Datasheet PDF文件第5页浏览型号VS-65APS12L-M3的Datasheet PDF文件第6页浏览型号VS-65APS12L-M3的Datasheet PDF文件第7页 
VS-65EPS..L-M3, VS-65APS..L-M3  
www.vishay.com  
Vishay Semiconductors  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
900  
180°  
At any rated load condition and with  
rated VRRM applied following surge.  
Initial TJ = 150 °C  
120°  
90°  
60°  
30°  
800  
700  
600  
500  
400  
300  
200  
at 60 Hz 0.0083 s  
at 50 Hz 0.0100 s  
RMS limit  
Ø
Conduction angle  
TJ = 150 °C  
20 30  
1
10  
100  
0
10  
40  
50  
60  
70  
Number of Equal Amplitude Half  
Cycle Current Pulse (N)  
Average On-State Current (A)  
Fig. 3 - Forward Power Loss Characteristics  
Fig. 5 - Maximum Non-Repetitive Surge Current  
140  
120  
100  
80  
1100  
180°  
120°  
90°  
60°  
30°  
Maximum non-repetitive surge current  
versus pulse train duration.  
Initial TJ = 150 °C  
1000  
900  
800  
700  
No voltage reapplied  
Rated VRRM reapplied  
DC  
RMS limit  
600  
500  
400  
300  
200  
100  
60  
Ø
40  
Conduction angle  
20  
TJ = 150 °C  
0
10  
0
20  
40  
60  
80  
100  
120  
0.01  
0.1  
1.0  
Average On-state Current (A)  
Pulse Train Duration (s)  
Fig. 6 - Maximum Non-Repetitive Surge Current  
Fig. 4 - Forward Power Loss Characteristics  
1000  
100  
10  
1
TJ = 25 °C  
TJ = 150 °C  
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5  
Instantaneous Forward Voltage (V)  
Fig. 7 - Forward Voltage Drop Characteristics  
Revision: 06-Jul-2018  
Document Number: 95998  
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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