Datasheet > VS-65EPS12LHM3

VS-65EPS12LHM3

更新时间： 2023-12-06 20:11:15

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	211K
描述
High Voltage Input Rectifier Diode, 65 A

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VS-65EPS12LHM3 数据手册

VS-65EPS12LHM3, VS-65APS12LHM3

www.vishay.com

Vishay Semiconductors

High Voltage Input Rectifier Diode, 65 A

FEATURES

• Very low forward voltage drop

• Glass passivated pellet chip junction

• AEC-Q101 qualified meets JESD 201 class 1A

whisker test

• Flexible solution for reliable AC power

rectification

TO-247AD 3L

TO-247AD 2L

• High surge, low V_Frugged blocking diode for DC charging

stations

Base cathode

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

APPLICATIONS

Cathode

Anode

• On-board and off-board EV / HEV battery chargers

• Renewable energy inverters

VS-65EPS12LHM3

VS-65APS12LHM3

DESCRIPTION

PRIMARY CHARACTERISTICS

High voltage rectifiers optimized for very low forward

voltage drop with moderate leakage.

I_F(AV)

65 A

V_R

V_Fat I_F

1200 V

These devices are intended for use in main rectification

(single or three phase bridge).

1.12 V

I_FSM

1000 A

150 °C

T_Jmax.

Package

TO-247AD 2L, TO-247AD 3L

Single

Circuit configuration

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL

I_F(AV)

V_RRM

I_FSM

CHARACTERISTICS

VALUES

UNITS

Sinusoidal waveform

1200

1000

V_F

30 A, T_J= 25 °C

1.0

T_J

-40 to +150

°C

VOLTAGE RATINGS

V_RSM, MAXIMUM

V_RRM, MAXIMUM

PEAK REVERSE VOLTAGE

I_RRM

AT 150 °C

NON-REPETITIVEPEAKREVERSE

PART NUMBER

VOLTAGE

VS-65EPS12LHM3

VS-65APS12LHM3

1200

1300

1.3

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum average forward current

I_F(AV)

T_C= 121 °C, 180° conduction half sine wave

840

10 ms sine pulse, rated V_RRMapplied

10 ms sine pulse, no voltage reapplied

10 ms sine pulse, rated V_RRMapplied

10 ms sine pulse, no voltage reapplied

t = 0.1 ms to 10 ms, no voltage reapplied

Maximum peak one cycle

non-repetitive surge current

I_FSM

1000

3530

5000

50 000

Maximum I²t for fusing

I²t

A²s

Maximum I²√t for fusing

I²√t

A²√s

Revision: 05-May-2023

Document Number: 96107

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7

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