VS-18TQ035S-M3, VS-18TQ040S-M3, VS-18TQ045S-M3
www.vishay.com
Vishay Semiconductors
High Performance Schottky Rectifier, 18 A
FEATURES
Base
cathode
2
• 175 °C TJ operation
• Low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
D2PAK
3
1
• Guard ring for enhanced ruggedness and long
term reliability
N/C
Anode
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Designed and qualified according to JEDEC®-JESD 47
PRODUCT SUMMARY
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
IF(AV)
18 A
VR
35 V, 40 V, 45 V
0.53 V
VF at IF
IRM
DESCRIPTION
25 mA at 125 °C
175 °C
The VS-18TQ... Schottky rectifier series has been optimized
for low reverse leakage at high temperature. The proprietary
barrier technology allows for reliable operation up to 175 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
TJ max.
EAS
24 mJ
Package
Diode variation
TO-263AB (D2PAK)
Single die
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
VALUES
18
UNITS
IF(AV)
VRRM
IFSM
VF
Rectangular waveform
A
V
Range
35 to 45
1800
tp = 5 μs sine
18 Apk, TJ = 125 °C
Range
A
0.53
V
TJ
-55 to 175
°C
VOLTAGE RATINGS
PARAMETER
SYMBOL
VR
VS-18TQ035S-M3
35
VS-18TQ040S-M3
VS-18TQ045S-M3
UNITS
Maximum DC reverse voltage
Maximum working peak reverse voltage
40
45
V
VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
50 % duty cycle at TC = 149 °C, rectangular waveform
VALUES
UNITS
Maximum average forward current
See fig. 5
IF(AV)
18
A
5 μs sine or 3 μs rect. pulse
1800
Maximum peak one cycle
non-repetitive surge current
See fig. 7
Following any rated
load condition and with
rated VRRM applied
IFSM
A
10 ms sine or 6 ms rect. pulse
390
24
Non-repetitive avalanche energy
Repetitive avalanche current
EAS
IAR
TJ = 25 °C, IAS = 3.6 A, L = 3.7 mH
mJ
A
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
3.6
Revision: 25-Feb-14
Document Number: 94928
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000