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VS-18TQ045S-M3 PDF预览

VS-18TQ045S-M3

更新时间: 2024-02-08 21:57:39
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
8页 182K
描述
Rectifier Diode, Schottky, 1 Phase, 1 Element, 45V V(RRM), Silicon, TO-263AB, D2PAK-3/2

VS-18TQ045S-M3 技术参数

是否Rohs认证:符合生命周期:Active
包装说明:R-PSSO-G2Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:26 weeks
风险等级:2.23Is Samacsys:N
其他特性:FREE WHEELING DIODE应用:GENERAL PURPOSE
外壳连接:CATHODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.72 VJEDEC-95代码:TO-263AB
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:390 A
元件数量:1相数:1
端子数量:2最高工作温度:175 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260最大重复峰值反向电压:45 V
最大反向电流:2500 µA表面贴装:YES
技术:SCHOTTKY端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:40Base Number Matches:1

VS-18TQ045S-M3 数据手册

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VS-18TQ035S-M3, VS-18TQ040S-M3, VS-18TQ045S-M3  
www.vishay.com  
Vishay Semiconductors  
High Performance Schottky Rectifier, 18 A  
FEATURES  
Base  
cathode  
2
• 175 °C TJ operation  
• Low forward voltage drop  
• High frequency operation  
• High purity, high temperature epoxy  
encapsulation for enhanced mechanical  
strength and moisture resistance  
D2PAK  
3
1
• Guard ring for enhanced ruggedness and long  
term reliability  
N/C  
Anode  
• Meets MSL level 1, per J-STD-020, LF maximum peak  
of 260 °C  
• Designed and qualified according to JEDEC®-JESD 47  
PRODUCT SUMMARY  
• Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
IF(AV)  
18 A  
VR  
35 V, 40 V, 45 V  
0.53 V  
VF at IF  
IRM  
DESCRIPTION  
25 mA at 125 °C  
175 °C  
The VS-18TQ... Schottky rectifier series has been optimized  
for low reverse leakage at high temperature. The proprietary  
barrier technology allows for reliable operation up to 175 °C  
junction temperature. Typical applications are in switching  
power supplies, converters, freewheeling diodes, and  
reverse battery protection.  
TJ max.  
EAS  
24 mJ  
Package  
Diode variation  
TO-263AB (D2PAK)  
Single die  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
CHARACTERISTICS  
VALUES  
18  
UNITS  
IF(AV)  
VRRM  
IFSM  
VF  
Rectangular waveform  
A
V
Range  
35 to 45  
1800  
tp = 5 μs sine  
18 Apk, TJ = 125 °C  
Range  
A
0.53  
V
TJ  
-55 to 175  
°C  
VOLTAGE RATINGS  
PARAMETER  
SYMBOL  
VR  
VS-18TQ035S-M3  
35  
VS-18TQ040S-M3  
VS-18TQ045S-M3  
UNITS  
Maximum DC reverse voltage  
Maximum working peak reverse voltage  
40  
45  
V
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
50 % duty cycle at TC = 149 °C, rectangular waveform  
VALUES  
UNITS  
Maximum average forward current  
See fig. 5  
IF(AV)  
18  
A
5 μs sine or 3 μs rect. pulse  
1800  
Maximum peak one cycle  
non-repetitive surge current  
See fig. 7  
Following any rated  
load condition and with  
rated VRRM applied  
IFSM  
A
10 ms sine or 6 ms rect. pulse  
390  
24  
Non-repetitive avalanche energy  
Repetitive avalanche current  
EAS  
IAR  
TJ = 25 °C, IAS = 3.6 A, L = 3.7 mH  
mJ  
A
Current decaying linearly to zero in 1 μs  
Frequency limited by TJ maximum VA = 1.5 x VR typical  
3.6  
Revision: 25-Feb-14  
Document Number: 94928  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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