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VS-112MT80KPBF PDF预览

VS-112MT80KPBF

更新时间: 2024-11-21 14:28:43
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
10页 248K
描述
Silicon Controlled Rectifier,

VS-112MT80KPBF 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:,Reach Compliance Code:unknown
ECCN代码:EAR99Factory Lead Time:18 weeks
风险等级:5.69峰值回流温度(摄氏度):NOT SPECIFIED
处于峰值回流温度下的最长时间:NOT SPECIFIED触发设备类型:SCR
Base Number Matches:1

VS-112MT80KPBF 数据手册

 浏览型号VS-112MT80KPBF的Datasheet PDF文件第2页浏览型号VS-112MT80KPBF的Datasheet PDF文件第3页浏览型号VS-112MT80KPBF的Datasheet PDF文件第4页浏览型号VS-112MT80KPBF的Datasheet PDF文件第5页浏览型号VS-112MT80KPBF的Datasheet PDF文件第6页浏览型号VS-112MT80KPBF的Datasheet PDF文件第7页 
VS-5.MT...KPbF, VS-9.MT...KPbF, VS-11.MT...KPbF Series  
www.vishay.com  
Vishay Semiconductors  
Three Phase Controlled Bridge (Power Modules),  
55 A to 110 A  
FEATURES  
• Package fully compatible with the industry  
standard INT-A-PAK power modules series  
• High thermal conductivity package, electrically  
insulated case  
• Excellent power volume ratio  
• 4000 VRMS isolating voltage  
• UL E78996 approved  
MT-K  
• Designed and qualified for industrial level  
• Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
PRODUCT SUMMARY  
IO  
55 A to 110 A  
800 V to 1600 V  
MT-K  
DESCRIPTION  
VRRM  
A range of extremely compact, encapsulated three phase  
controlled bridge rectifiers offering efficient and reliable  
operation. They are intended for use in general purpose and  
heavy duty applications.  
Package  
Circuit  
Three phase bridge  
MAJOR RATINGS AND CHARACTERISTICS  
VALUES  
5.MT...K  
VALUES  
9.MT...K  
VALUES  
11.MT...K  
SYMBOL  
CHARACTERISTICS  
UNITS  
55  
85  
90  
85  
110  
85  
A
IO  
TC  
°C  
50 Hz  
60 Hz  
50 Hz  
60 Hz  
390  
410  
770  
700  
7700  
950  
1130  
1180  
6380  
5830  
63 800  
IFSM  
I2t  
A
1000  
4525  
A2s  
4130  
I2t  
VRRM  
TStg  
TJ  
45 250  
800 to 1600  
-40 to 125  
-40 to 125  
A2s  
V
Range  
Range  
Range  
°C  
°C  
ELECTRICAL SPECIFICATIONS  
VOLTAGE RATINGS  
V
DRM, MAXIMUM  
V
RRM, MAXIMUM  
VRSM, MAXIMUM  
I
RRM/IDRM,  
REPETITIVE PEAK  
OFF-STATE VOLTAGE,  
GATE OPEN CIRCUIT  
V
TYPE  
NUMBER  
VOLTAGE  
CODE  
REPETITIVE PEAK  
REVERSE VOLTAGE  
V
NON-REPETITIVE PEAK  
MAXIMUM  
AT TJ = 125 °C  
mA  
REVERSE VOLTAGE  
V
80  
800  
1000  
1200  
1400  
1600  
800  
900  
1100  
1300  
1500  
1700  
900  
800  
100  
120  
140  
160  
80  
1000  
1200  
1400  
1600  
800  
VS-5.MT...K  
10  
20  
100  
120  
140  
160  
1000  
1200  
1400  
1600  
1100  
1300  
1500  
1700  
1000  
1200  
1400  
1600  
VS-9.MT...K  
VS-11.MT...K  
Revision: 27-Feb-14  
Document Number: 94353  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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