VRF190E
100V, 150W, 150MHz
RF POWER VERTICAL MOSFET
The VRF190E is a thermally-enhanced version of the VRF190. It is a gold-
metallized silicon n-channel RF power transistor designed for broadband
commercial and military applications requiring high power and gain without
compromising reliability, ruggedness, or inter-modulation distortion.
M174A
FEATURES
• 5:1 Load VSWR Capability at Specified Operating Conditions
• Enhanced Package for 30% higher PD
• 150W with 22dB Typical Gain @ 30MHz, 100V
• 150W with 14dB Typical Gain @ 150MHz, 100V
• Excellent Stability & Low IMD
• Nitride Passivated
• Refractory Gold Metallization
• Drop in Replacement for SD3931-10 with Higher BV
• RoHS Compliant
Maximum Ratings
All Ratings: TC =25°C unless otherwise specified
Symbol
Parameter
VRF190E
Unit
VDSS
Drain-Source Voltage
270
V
ID
VGS
PD
Continuous Drain Current @ TC = 25°C
Gate-Source Voltage
12
A
±40
V
Total Device dissipation @ TC = 25°C
Storage Temperature Range
Operating Junction Temperature
390
W
TSTG
TJ
-65 to 200
200
°C
Static Electrical Characteristics
Symbol
Parameter
Min
Typ
280
3.5
Max
Unit
V(BR)DSS
Drain-Source Breakdown Voltage (VGS = 0V, ID = 100mA)
On State Drain Voltage (ID(ON) = 5A, VGS = 10V)
Zero Gate Voltage Drain Current (VDS = 200V, VGS = 0V)
Gate-Source Leakage Current (VDS = ±20V, VDS = 0V)
Forward Transconductance (VDS = 10V, ID = 5A)
Gate Threshold Voltage (VDS = 10V, ID = 100mA)
270
V
VDS(ON)
5.0
1.0
1.0
IDSS
IGSS
mA
μA
gfs
4.0
2.9
5
mhos
V
VGS(TH)
3.6
4.4
Thermal Characteristics
Symbol
Characteristic
Min
Typ
Max
Unit
Junction to Case Thermal Resistance
0.45
°C/W
Rθ
JC
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com