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VRF190E PDF预览

VRF190E

更新时间: 2024-02-15 11:28:01
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体射频场效应晶体管放大器局域网
页数 文件大小 规格书
4页 113K
描述
RF POWER VERTICAL MOSFET

VRF190E 技术参数

生命周期:TransferredReach Compliance Code:compliant
风险等级:5.84

VRF190E 数据手册

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VRF190E  
100V, 150W, 150MHz  
RF POWER VERTICAL MOSFET  
The VRF190E is a thermally-enhanced version of the VRF190. It is a gold-  
metallized silicon n-channel RF power transistor designed for broadband  
commercial and military applications requiring high power and gain without  
compromising reliability, ruggedness, or inter-modulation distortion.  
M174A  
FEATURES  
• 5:1 Load VSWR Capability at Specied Operating Conditions  
• Enhanced Package for 30% higher PD  
• 150W with 22dB Typical Gain @ 30MHz, 100V  
• 150W with 14dB Typical Gain @ 150MHz, 100V  
• Excellent Stability & Low IMD  
• Nitride Passivated  
• Refractory Gold Metallization  
• Drop in Replacement for SD3931-10 with Higher BV  
• RoHS Compliant  
Maximum Ratings  
All Ratings: TC =25°C unless otherwise specied  
Symbol  
Parameter  
VRF190E  
Unit  
VDSS  
Drain-Source Voltage  
270  
V
ID  
VGS  
PD  
Continuous Drain Current @ TC = 25°C  
Gate-Source Voltage  
12  
A
±40  
V
Total Device dissipation @ TC = 25°C  
Storage Temperature Range  
Operating Junction Temperature  
390  
W
TSTG  
TJ  
-65 to 200  
200  
°C  
Static Electrical Characteristics  
Symbol  
Parameter  
Min  
Typ  
280  
3.5  
Max  
Unit  
V(BR)DSS  
Drain-Source Breakdown Voltage (VGS = 0V, ID = 100mA)  
On State Drain Voltage (ID(ON) = 5A, VGS = 10V)  
Zero Gate Voltage Drain Current (VDS = 200V, VGS = 0V)  
Gate-Source Leakage Current (VDS = ±20V, VDS = 0V)  
Forward Transconductance (VDS = 10V, ID = 5A)  
Gate Threshold Voltage (VDS = 10V, ID = 100mA)  
270  
V
VDS(ON)  
5.0  
1.0  
1.0  
IDSS  
IGSS  
mA  
μA  
gfs  
4.0  
2.9  
5
mhos  
V
VGS(TH)  
3.6  
4.4  
Thermal Characteristics  
Symbol  
Characteristic  
Min  
Typ  
Max  
Unit  
Junction to Case Thermal Resistance  
0.45  
°C/W  
Rθ  
JC  
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.  
Microsemi Website - http://www.microsemi.com  

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