Datasheet > VRF2933MPG

VRF2933MPG

更新时间： 2023-05-15 00:00:00

品牌	Logo	应用领域
美高森美 - MICROSEMI		/
页数	文件大小	规格书
5页	128K
描述
RF Power Field-Effect Transistor

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VRF2933MPG 数据手册

VRF2933(G)

VRF2933MP(G)

50V, 300W, 150MHz

RF POWER VERTICAL MOSFET

The VRF2933 is a gold-metallized silicon n-channel RF power transistor de-

signedforbroadbandcommercialandmilitaryapplicationsrequiringhighpower

and gain without compromising reliability, ruggedness, or inter-modulation

distortion.

FEATURES

• 3:1 Load VSWR Capability at Speciﬁed Operating Conditions

• Improved Ruggedness V_(BR)DSS= 170V

• 300W with 22dB Typ. Gain @ 30MHz, 50V

• Excellent Stability & Low IMD

• Nitride Passivated

• Refractory Gold Metallization

• Improved Replacement for SD2933

• Thermally Enhanced Package

• RoHS Compliant

• Common Source Conﬁguration

• Available in Matched Pairs

Maximum Ratings

All Ratings: T_C=25°C unless otherwise speciﬁed

Symbol

Parameter

VRF2933(MP)

Unit

V_DSS

Drain-Source Voltage

170

I_D

V_GS

P_D

Continuous Drain Current @ T_C= 25°C

Gate-Source Voltage

±40

Total Device dissipation @ T_C= 25°C

Storage Temperature Range

Operating Junction Temperature Max

648

T_STG

T_J

-65 to 150

200

°C

Static Electrical Characteristics

Symbol

Parameter

Min

Typ

180

1.8

Max

Unit

V_(BR)DSS

Drain-Source Breakdown Voltage (V_GS= 0V, I_D= 100mA)

On State Drain Voltage (I_D(ON)= 20A, V_GS= 10V)

Zero Gate Voltage Drain Current (V_DS= 100V, V_GS= 0V)

Gate-Source Leakage Current (V_DS= ±20V, V_DS= 0V)

Forward Transconductance (V_DS= 10V, I_D= 20A)

Gate Threshold Voltage (V_DS= 10V, I_D= 100mA)

170

V_DS(ON)

2.8

2.0

I_DSS

I_GSS

μA

g_fs

mhos

V_GS(TH)

2.9

3.6

4.4

Thermal Characteristics

Symbol

Characteristic

Min

Typ

Max

Unit

Junction to Case Thermal Resistance

0.27

°C/W

R_θ

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

Microsemi Website - http://www.microsemi.com

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