Datasheet > VP3203

VP3203

更新时间： 2023-12-06 20:11:57

品牌	Logo	应用领域
美国微芯 - MICROCHIP		/
页数	文件大小	规格书
6页	701K
描述
This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure

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VP3203 数据手册

Supertex inc.

VP3203

P-Channel Enhancement-Mode

Vertical DMOS FET

Features

General Description

► Free from secondary breakdown

► Low power drive requirement

► Ease of paralleling

This low threshold, enhancement-mode (normally-off)

transistor utilizes a vertical DMOS structure and Supertex’s

well-proven, silicon-gate manufacturing process. This

combination produces a device with the power handling

capabilities of bipolar transistors and the high input impedance

and positive temperature coefﬁcient inherent in MOS devices.

Characteristic of all MOS structures, this device is free

from thermal runaway and thermally-induced secondary

breakdown.

► Low C_ISSand fast switching speeds

► High input impedance and high gain

► Excellent thermal stability

► Integral source-to-drain diode

Applications

► Motor controls

► Converters

Supertex’s vertical DMOS FETs are ideally suited to a wide

range of switching and amplifying applications where very

low threshold voltage, high breakdown voltage, high input

impedance, low input capacitance, and fast switching speeds

are desired.

► Ampliﬁers

► Switches

► Power supply circuits

► Drivers (relays, hammers, solenoids, lamps,

memories, displays, bipolar transistors, etc.)

Ordering Information

Product Summary

R_DS(ON)

I_D(ON)

Part Number

Package Option

Packing

BV_DSS/BV_DGS

(max)

(min)

VP3203N3-G

3-Lead TO-92

1000/Bag

-30V

0.6Ω

-4.0A

VP3203N3-G P002

VP3203N3-G P003

Pin Conﬁguration

VP3203N3-G P005 3-Lead TO-92

VP3203N3-G P013

2000/Reel

DRAIN

VP3203N3-G P014

VP3203N3-G

TO-243AA (SOT-89)

DRAIN

-G denotes a lead (Pb)-free / RoHS compliant package.

Contact factory for Wafer / Die availablity.

Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.

SOURCE

DRAIN

GATE

Absolute Maximum Ratings

Parameter

TO-92

TO-243AA (SOT-89)

Value

BV_DSS

BV_DGS

±20V

Drain-to-source voltage

Drain-to-gate voltage

Product Marking

SiVP

3 2 0 3

YYWW

YY = Year Sealed

Gate-to-source voltage

WW = Week Sealed

Operating and storage temperature

-55^OC to +150^OC

= “Green” Packaging

Absolute Maximum Ratings are those values beyond which damage to the device

may occur. Functional operation under these conditions is not implied. Continuous

operation of the device at the absolute rating level may affect device reliability. All

voltages are referenced to device ground.

Package may or may not include the following marks: Si or

TO-92

Typical Thermal Resistance

W = Code for week sealed

VP2LW

= “Green” Packaging

Package may or may not include the following marks: Si or

TO-243AA (SOT-89)

Package

θ_ja

TO-92

132^OC/W

133^OC/W

TO-243AA (SOT-89)

Doc.# DSFP-VP3203

B082613

Supertex inc.

www.supertex.com

12 3 4 5 6

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与VP3203相关器件

型号	品牌	描述	获取价格	数据表
VP3203N3	SUPERTEX	P-Channel Enhancement-Mode Vertical DMOS FETs	获取价格
VP3203N3-G	MICROCHIP	650mA, 30V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92	获取价格
VP3203N3P001	SUPERTEX	Small Signal Field-Effect Transistor, 0.65A I(D), 30V, 1-Element, P-Channel, Silicon, Meta	获取价格
VP3203N3P002	SUPERTEX	Small Signal Field-Effect Transistor, 0.65A I(D), 30V, 1-Element, P-Channel, Silicon, Meta	获取价格
VP3203N3P003	SUPERTEX	Small Signal Field-Effect Transistor, 0.65A I(D), 30V, 1-Element, P-Channel, Silicon, Meta	获取价格
VP3203N3P011	SUPERTEX	Small Signal Field-Effect Transistor, 0.65A I(D), 30V, 1-Element, P-Channel, Silicon, Meta	获取价格

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