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VND830ETR-E PDF预览

VND830ETR-E

更新时间: 2024-01-07 05:45:53
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 驱动器
页数 文件大小 规格书
19页 310K
描述
13.5A BUF OR INV BASED PRPHL DRVR, PDSO16, ROHS COMPLIANT, SOP-16

VND830ETR-E 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:SOIC包装说明:HSOP, SOP10,.55FL
针数:10Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8542.39.00.01
Factory Lead Time:18 weeks风险等级:0.81
Samacsys Confidence:4Samacsys Status:Released
Samacsys PartID:1669Samacsys Pin Count:11
Samacsys Part Category:Integrated CircuitSamacsys Package Category:Small Outline Packages
Samacsys Footprint Name:PowerSO-10Samacsys Released Date:2015-05-24 21:47:42
Is Samacsys:N内置保护:TRANSIENT; OVER CURRENT; OVER VOLTAGE; THERMAL; UNDER VOLTAGE
驱动器位数:2接口集成电路类型:BUFFER OR INVERTER BASED PERIPHERAL DRIVER
JESD-30 代码:R-PDSO-G10JESD-609代码:e3
长度:9.4 mm湿度敏感等级:3
功能数量:2端子数量:10
输出电流流向:SOURCE最大输出电流:6 A
标称输出峰值电流:9 A封装主体材料:PLASTIC/EPOXY
封装代码:HSOP封装等效代码:SOP10,.55FL
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, HEAT SINK/SLUG
峰值回流温度(摄氏度):NOT SPECIFIED电源:8/36 V
认证状态:Not Qualified座面最大高度:3.75 mm
子类别:Peripheral Drivers最大供电电压:36 V
最小供电电压:5.5 V标称供电电压:13 V
表面贴装:YES端子面层:Matte Tin (Sn) - annealed
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:7.5 mmBase Number Matches:1

VND830ETR-E 数据手册

 浏览型号VND830ETR-E的Datasheet PDF文件第1页浏览型号VND830ETR-E的Datasheet PDF文件第2页浏览型号VND830ETR-E的Datasheet PDF文件第3页浏览型号VND830ETR-E的Datasheet PDF文件第5页浏览型号VND830ETR-E的Datasheet PDF文件第6页浏览型号VND830ETR-E的Datasheet PDF文件第7页 
VND830  
ELECTRICAL CHARACTERISTICS (continued)  
STATUS PIN  
Symbol  
Parameter  
Test Conditions  
= 1.6 mA  
STAT  
Min  
Typ  
Max  
0.5  
10  
Unit  
V
V
Status Low Output Voltage I  
Status Leakage Current  
STAT  
I
Normal Operation; V  
= 5V  
µA  
LSTAT  
STAT  
Status Pin Input  
Capacitance  
C
Normal Operation; V  
= 5V  
100  
8
pF  
STAT  
STAT  
I
= 1mA  
6
6.8  
V
V
STAT  
V
Status Clamp Voltage  
I
SCL  
= - 1mA  
-0.7  
STAT  
PROTECTIONS  
Symbol  
Parameter  
Test Conditions  
Min  
150  
135  
7
Typ  
Max  
Unit  
°C  
T
Shut-down Temperature  
Reset Temperature  
Thermal Hysteresis  
175  
200  
TSD  
T
°C  
R
T
15  
9
°C  
hyst  
Status Delay in Overload  
Conditions  
Tj>TTSD  
T
20  
µs  
SDL  
V
=13V  
6
15  
15  
A
A
CC  
I
Current limitation  
lim  
5.5V < V < 36V  
CC  
Turn-off Output Clamp  
Voltage  
V
I
=2A; L= 6mH  
V
-41 V -48 V -55  
V
demag  
OUT  
CC  
CC  
CC  
OPENLOAD DETECTION  
Symbol  
Parameter  
Openload ON State  
Detection Threshold  
Openload ON State  
Detection Delay  
Test Conditions  
Min  
Typ  
Max  
Unit  
I
V =5V  
50  
100  
200  
mA  
OL  
IN  
t
I
=0A  
OUT  
200  
µs  
DOL(on)  
Openload OFF State  
Voltage Detection  
Threshold  
V
V =0V  
1.5  
2.5  
3.5  
V
OL  
IN  
Openload Detection Delay  
at Turn Off  
t
1000  
µs  
DOL(off)  
OPEN LOAD STATUS TIMING (with external pull-up)  
< I  
OVERTEMP STATUS TIMING  
T > T  
I
V
> V  
OL  
OUT OL  
OUT  
j
TSD  
V
INn  
V
V
INn  
V
STATn  
STATn  
t
t
SDL  
SDL  
t
t
DOL(off)  
DOL(on)  
4/19  
2

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