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VND830ETR-E PDF预览

VND830ETR-E

更新时间: 2024-02-11 20:28:35
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 驱动器
页数 文件大小 规格书
19页 310K
描述
13.5A BUF OR INV BASED PRPHL DRVR, PDSO16, ROHS COMPLIANT, SOP-16

VND830ETR-E 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:SOIC包装说明:HSOP, SOP10,.55FL
针数:10Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8542.39.00.01
Factory Lead Time:18 weeks风险等级:0.81
Samacsys Confidence:4Samacsys Status:Released
Samacsys PartID:1669Samacsys Pin Count:11
Samacsys Part Category:Integrated CircuitSamacsys Package Category:Small Outline Packages
Samacsys Footprint Name:PowerSO-10Samacsys Released Date:2015-05-24 21:47:42
Is Samacsys:N内置保护:TRANSIENT; OVER CURRENT; OVER VOLTAGE; THERMAL; UNDER VOLTAGE
驱动器位数:2接口集成电路类型:BUFFER OR INVERTER BASED PERIPHERAL DRIVER
JESD-30 代码:R-PDSO-G10JESD-609代码:e3
长度:9.4 mm湿度敏感等级:3
功能数量:2端子数量:10
输出电流流向:SOURCE最大输出电流:6 A
标称输出峰值电流:9 A封装主体材料:PLASTIC/EPOXY
封装代码:HSOP封装等效代码:SOP10,.55FL
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, HEAT SINK/SLUG
峰值回流温度(摄氏度):NOT SPECIFIED电源:8/36 V
认证状态:Not Qualified座面最大高度:3.75 mm
子类别:Peripheral Drivers最大供电电压:36 V
最小供电电压:5.5 V标称供电电压:13 V
表面贴装:YES端子面层:Matte Tin (Sn) - annealed
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:7.5 mmBase Number Matches:1

VND830ETR-E 数据手册

 浏览型号VND830ETR-E的Datasheet PDF文件第1页浏览型号VND830ETR-E的Datasheet PDF文件第3页浏览型号VND830ETR-E的Datasheet PDF文件第4页浏览型号VND830ETR-E的Datasheet PDF文件第5页浏览型号VND830ETR-E的Datasheet PDF文件第6页浏览型号VND830ETR-E的Datasheet PDF文件第7页 
VND830  
ABSOLUTE MAXIMUM RATING  
Symbol  
Parameter  
Value  
Unit  
V
V
DC Supply Voltage  
41  
- 0.3  
CC  
- V  
Reverse DC Supply Voltage  
V
CC  
GND  
OUT  
- I  
DC Reverse Ground Pin Current  
- 200  
mA  
A
I
DC Output Current  
Internally Limited  
- 6  
- I  
Reverse DC Output Current  
A
OUT  
I
DC Input Current  
+/- 10  
mA  
mA  
IN  
I
DC Status Current  
+/- 10  
STAT  
Electrostatic Discharge (Human Body Model: R=1.5KΩ; C=100pF)  
- INPUT  
4000  
4000  
5000  
5000  
V
V
V
V
V
- STATUS  
- OUTPUT  
ESD  
- V  
CC  
Maximum Switching Energy  
E
102  
mJ  
MAX  
(L=1.8mH; R =0; V =13.5V; T  
=150ºC; I =9A)  
L
L
bat  
jstart  
P
Power Dissipation T  
=25°C  
8.3  
W
°C  
°C  
°C  
tot  
lead  
T
Junction Operating Temperature  
Case Operating Temperature  
Storage Temperature  
Internally Limited  
- 40 to 150  
j
T
c
T
- 55 to 150  
stg  
CONNECTION DIAGRAM (TOP VIEW)  
1
V
CC  
16  
V
CC  
OUTPUT 1  
OUTPUT 1  
OUTPUT 1  
OUTPUT 2  
OUTPUT 2  
N.C.  
GND  
INPUT 1  
STATUS 1  
STATUS 2  
INPUT 2  
OUTPUT 2  
V
8
V
9
CC  
CC  
CURRENT AND VOLTAGE CONVENTIONS  
I
S
I
V
IN1  
CC  
V
CC  
INPUT 1  
I
I
STAT1  
V
IN1  
STATUS 1  
I
OUT1  
V
IN2  
STAT1  
OUTPUT 1  
OUTPUT 2  
INPUT 2  
V
OUT1  
I
V
I
STAT2  
IN2  
OUT2  
STATUS 2  
GND  
V
OUT2  
V
STAT2  
I
GND  
2/19  

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