生命周期: | Obsolete | 包装说明: | CYLINDRICAL, O-PBCY-T3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.95 | 风险等级: | 5.59 |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 60 V |
最大漏极电流 (ID): | 0.23 A | 最大漏源导通电阻: | 7.5 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | 最大反馈电容 (Crss): | 5 pF |
JEDEC-95代码: | TO-226AA | JESD-30 代码: | O-PBCY-T3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | ROUND |
封装形式: | CYLINDRICAL | 极性/信道类型: | N-CHANNEL |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | BOTTOM |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
VN2222N6 | MICROCHIP | 900mA, 220V, 4 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
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VN2222NC | SUPERTEX | N-Channel Enhancement-Mode Vertical DMOS FETs |
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VN2222RLRA | ETC | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 150MA I(D) | TO-92 |
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VN2222RLRM | ETC | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 150MA I(D) | TO-92 |
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VN2224 | SUPERTEX | N-Channel Enhancement-Mode Vertical DMOS FETs |
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VN2224 | MICROCHIP | This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and we |
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