5秒后页面跳转
VN2222RLRA PDF预览

VN2222RLRA

更新时间: 2024-02-14 21:31:02
品牌 Logo 应用领域
其他 - ETC 晶体晶体管
页数 文件大小 规格书
4页 52K
描述
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 150MA I(D) | TO-92

VN2222RLRA 技术参数

是否无铅:含铅是否Rohs认证:不符合
生命周期:Obsolete零件包装代码:TO-92
包装说明:CYLINDRICAL, O-PBCY-T3针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.66
Is Samacsys:N配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (Abs) (ID):0.15 A
最大漏极电流 (ID):0.15 A最大漏源导通电阻:7.5 Ω
FET 技术:METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss):5 pF
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
JESD-609代码:e0元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):0.4 W认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICONBase Number Matches:1

VN2222RLRA 数据手册

 浏览型号VN2222RLRA的Datasheet PDF文件第2页浏览型号VN2222RLRA的Datasheet PDF文件第3页浏览型号VN2222RLRA的Datasheet PDF文件第4页 
VN2222LL  
Preferred Device  
Small Signal MOSFET  
150 mAmps, 60 Volts  
N–Channel TO–92  
MAXIMUM RATINGS  
http://onsemi.com  
Rating  
Drain–Source Voltage  
Symbol  
Value  
60  
Unit  
Vdc  
Vdc  
150 mAMPS  
60 VOLTS  
V
DSS  
Drain–Gate Voltage (R  
= 1.0 M)  
V
DGR  
60  
GS  
R
= 7.5  
DS(on)  
Gate–Source Voltage  
– Continuous  
V
±20  
±40  
Vdc  
Vpk  
GS  
N–Channel  
– Non–repetitive (t 50 µs)  
V
GSM  
p
D
Drain Current  
– Continuous  
– Pulsed  
mAdc  
I
150  
1000  
D
I
DM  
Total Power Dissipation @ T = 25°C  
Derate above 25°C  
P
D
400  
3.2  
mW  
mW/°C  
A
G
Operating and Storage  
Temperature Range  
T , T  
–55 to  
+150  
°C  
J
stg  
S
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
312.5  
300  
Unit  
°C/W  
°C  
Thermal Resistance, Junction to Ambient  
R
TO–92  
CASE 29  
Style 22  
θJA  
Maximum Lead Temperature for  
Soldering Purposes, 1/16from case  
for 10 seconds  
T
L
1
2
3
MARKING DIAGRAM  
& PIN ASSIGNMENT  
VN2222LL  
YWW  
1
3
Source  
Drain  
2
Gate  
Y
WW  
= Year  
= Work Week  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 3 of this data sheet.  
Preferred devices are recommended choices for future use  
and best overall value.  
Semiconductor Components Industries, LLC, 2000  
1
Publication Order Number:  
November, 2000 – Rev. 2  
VN2222LL/D  

与VN2222RLRA相关器件

型号 品牌 描述 获取价格 数据表
VN2222RLRM ETC TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 150MA I(D) | TO-92

获取价格

VN2224 SUPERTEX N-Channel Enhancement-Mode Vertical DMOS FETs

获取价格

VN2224 MICROCHIP This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and we

获取价格

VN2224_13 SUPERTEX N-Channel Enhancement-Mode Vertical DMOS FET

获取价格

VN2224N3 SUPERTEX N-Channel Enhancement-Mode Vertical DMOS FETs

获取价格

VN2224N3-G SUPERTEX N-Channel Enhancement-Mode Vertical DMOS FET

获取价格