Datasheet > VMB10-12S_07

VMB10-12S_07

更新时间： 2025-08-19 12:20:03

品牌	Logo	应用领域
ASI		晶体晶体管射频
页数	文件大小	规格书
1页	17K
描述
NPN SILICON RF POWER TRANSISTOR

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VMB10-12S_07 数据手册

VMB10-12S

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:

The ASI VMB10-12S is Designed for

12.5 V, Medium Band Class C

Application.

PACKAGE STYLE .380 4L STUD

.112x45°

FEATURES:

• Common Emitter

• P_G= 13 dB at 10 W/88 MHz

• Omnigold™ Metalization System

ØC

#8-32 UNC-2A

MAXIMUM RATINGS

2.0 A

36 V

I_C

MINIMUM

inches / mm

MAXIMUM

inches / mm

DIM

V_CBO

V_CEO

V_EBO

P_DISS

T_J

.220 / 5.59

.980 / 24.89

.370 / 9.40

.004 / 0.10

.320 / 8.13

.100 / 2.54

.450 / 11.43

.090 / 2.29

.155 / 3.94

.230 / 5.84

18 V

.385 / 9.78

.007 / 0.18

.330 / 8.38

.130 / 3.30

.490 / 12.45

.100 / 2.54

.175 / 4.45

.750 / 19.05

4.0 V

20 W @ T_C= 25 °C

-65 °C to +200 °C

-65 °C to +150 °C

5.0 °C/W

T_STG

θ_JC

ORDER CODE: ASI10742

CHARACTERISTICS ^T_C= 25 °C

SYMBOL

BV_CEO

NONETEST CONDITIONS

MINIMUM TYPICAL MAXIMUM UNITS

I_C= 15 mA

I_C= 50 mA

I_E= 2.5 mA

BV_CES

BV_EBO

I_CBO

4.0

_CB= 12.5 V

1.0

---

V_CE= 5.0 V

I_C= 250 mA

P_OUT= 10 W

5.0

200

h_FE

_CB= 12.5 V

f = 1.0 MHz

f = 88 MHz

C_OB

P_G

V_CE= 12.5 V

η_C

A D V A N C E D S E M I C O N D U C T O R, I N C.

REV. C

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004

1/1

Specifications are subject to change without notice.

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