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VI40120C-M3/4W PDF预览

VI40120C-M3/4W

更新时间: 2024-11-21 20:50:19
品牌 Logo 应用领域
威世 - VISHAY 功效瞄准线二极管
页数 文件大小 规格书
5页 143K
描述
DIODE 20 A, 120 V, SILICON, RECTIFIER DIODE, TO-262AA, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode

VI40120C-M3/4W 技术参数

生命周期:Active零件包装代码:TO-262AA
包装说明:R-PSIP-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.39
其他特性:FREE WHEELING DIODE, LOW POWER LOSS应用:EFFICIENCY
外壳连接:CATHODE配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.71 VJEDEC-95代码:TO-262AA
JESD-30 代码:R-PSIP-T3最大非重复峰值正向电流:250 A
元件数量:2相数:1
端子数量:3最高工作温度:150 °C
最低工作温度:-40 °C最大输出电流:20 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:120 V
子类别:Rectifier Diodes表面贴装:NO
技术:SCHOTTKY端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

VI40120C-M3/4W 数据手册

 浏览型号VI40120C-M3/4W的Datasheet PDF文件第2页浏览型号VI40120C-M3/4W的Datasheet PDF文件第3页浏览型号VI40120C-M3/4W的Datasheet PDF文件第4页浏览型号VI40120C-M3/4W的Datasheet PDF文件第5页 
V40120C, VI40120C  
Vishay General Semiconductor  
www.vishay.com  
Dual High Voltage Trench MOS Barrier Schottky Rectifier  
Ultra Low VF = 0.43 V at IF = 5 A  
FEATURES  
TMBS®  
• Trench MOS Schottky technology  
TO-220AB  
TO-262AA  
• Low forward voltage drop, low power losses  
• High efficiency operation  
K
• Solder dip 275 °C max. 10 s, per JESD 22-B106  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
3
3
2
2
1
TYPICAL APPLICATIONS  
1
VI40120C  
V40120C  
For use in high frequency DC/DC converters, switching  
power supplies, freewheeling diodes, OR-ing diode, and  
reverse battery protection.  
PIN 1  
PIN 1  
PIN 3  
PIN 2  
K
PIN 2  
CASE  
PIN 3  
MECHANICAL DATA  
PRIMARY CHARACTERISTICS  
Case: TO-220AB and TO-262AA  
Molding compound meets UL 94 V-0 flammability rating  
IF(AV)  
2 x 20 A  
Base P/N-M3  
commercial grade  
- halogen-free, RoHS-compliant, and  
VRRM  
120 V  
250 A  
0.63 V  
150 °C  
IFSM  
Terminals: matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
M3 suffix meets JESD 201 class 1A whisker testt  
VF at IF = 20 A  
TJ max.  
Polarity: as marked  
Package  
TO-220AB, TO-262AA  
Common cathode  
Mounting Torque: 10 in-lbs max.  
Diode variation  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
V40120C  
VI40120C  
UNIT  
Max. repetitive peak reverse voltage  
VRRM  
120  
40  
V
per device  
Max. average forward rectified current (fig. 1)  
per diode  
IF(AV)  
IFSM  
A
A
20  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load per diode  
250  
Voltage rate of change (rated VR)  
dV/dt  
10 000  
V/μs  
°C  
Operating junction and storage temperature range  
TJ, TSTG  
-40 to +150  
Revision: 09-Nov-17  
Document Number: 89163  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

VI40120C-M3/4W 替代型号

型号 品牌 替代类型 描述 数据表
VI40120CHM3/4W VISHAY

完全替代

DIODE 20 A, 120 V, SILICON, RECTIFIER DIODE, TO-262AA, HALOGEN FREE AND ROHS COMPLIANT, PL
VI40120C-E3/4W VISHAY

完全替代

Dual High-Voltage Trench MOS Barrier Schottky Rectifier
VI40120C VISHAY

功能相似

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 5 A

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