5秒后页面跳转
VDI100-06P1 PDF预览

VDI100-06P1

更新时间: 2024-02-17 15:21:54
品牌 Logo 应用领域
IXYS 双极性晶体管
页数 文件大小 规格书
2页 98K
描述
IGBT Modules

VDI100-06P1 数据手册

 浏览型号VDI100-06P1的Datasheet PDF文件第2页 
VDI100-06P1 VII 100-06P1  
VID100-06P1 VIO100-06P1  
IC25  
VCES  
= 93 A  
= 600 V  
IGBT Modules in ECO-PAC 2  
Short Circuit SOA Capability  
VCE(sat) typ. = 2.4 V  
Square RBSOA  
Preliminary data sheet  
VII  
VIO  
VDI  
VID  
L9  
X15  
L9  
X13  
NTC  
X15  
NTC  
X16  
E2  
A
S
X15  
L9  
F1  
T16  
B3  
NTC  
X16  
K10  
Pin arangement see outlines  
X16  
Features  
IGBTs  
• NPT IGBT's  
Symbol  
VCES  
Conditions  
Maximum Ratings  
600  
- positive temperature coefficient of  
saturation voltage  
- fast switching  
TVJ = 25°C to 150°C  
V
±
VGES  
20  
V
• FRED diodes  
- fast reverse recovery  
- low forward voltage  
IC25  
IC80  
TC = 25°C  
TC = 80°C  
93  
63  
A
A
• Industry Standard Package  
- solderable pins for PCB mounting  
- isolated DCB ceramic base plate  
ICM  
VCEK  
VGE = ±15 V; RG = 15 ; TVJ = 125°C  
RBSOA, Clamped inductive load; L = 100 µH  
150  
VCES  
A
µs  
W
tSC  
(SCSOA)  
VCE = VCES; VGE = ±15 V; RG = 15 ; TVJ = 125°C  
non-repetitive  
10  
Advantages  
• space and weight savings  
• reduced protection circuits  
Ptot  
TC = 25°C  
294  
• leads with expansion bend for stress relief  
Symbol  
Conditions  
Characteristic Values  
(TVJ = 25°C, unless otherwise specified)  
Typical Applications  
min.  
typ. max.  
• AC and DC motor control  
• AC servo and robot drives  
• power supplies  
VCE(sat)  
IC = 100 A; VGE = 15 V; TVJ = 25°C  
TVJ = 125°C  
2.4  
2.8  
2.8  
V
V
• welding inverters  
VGE(th)  
ICES  
IC = 1.5 mA; VGE = VCE  
4.5  
6.5  
V
VCE = VCES  
;
VGE = 0 V; TVJ = 25°C  
TVJ = 125°C  
1.4 mA  
6.5 mA  
±
IGES  
VCE = 0 V; VGE  
=
20 V  
150 nA  
td(on)  
tr  
td(off)  
tf  
Eon  
Eoff  
150  
60  
450  
40  
3.2  
2.2  
ns  
ns  
ns  
ns  
mJ  
mJ  
Inductive load, TVJ = 125°C  
VCE = 300 V; IC = 60 A  
VGE = 15/0 V; RG = 15 Ω  
Cies  
VCE = 25 V; VGE = 0 V; f = 1 MHz  
4.2  
nF  
RthJC  
RthJH  
(per IGBT)  
with heatsink compound (0.42 K/m.K; 50 µm)  
0.43 K/W  
K/W  
0.85  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2003 IXYS All rights reserved  
1 - 2  

与VDI100-06P1相关器件

型号 品牌 获取价格 描述 数据表
VDI100-12S3 ETC

获取价格

TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CES | 100A I(C)
VDI125-12P1 IXYS

获取价格

IGBT Modules
VDI125-12S4 ETC

获取价格

TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CES | 125A I(C)
VDI130-06P1 IXYS

获取价格

IGBT Modules
VDI150-12S4 ETC

获取价格

TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CES | 150A I(C)
VDI160-12P1 IXYS

获取价格

IGBT Modules in ECO-PAC 2
VDI200-12S4 ETC

获取价格

TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CES | 200A I(C)
VDI25-06P1 IXYS

获取价格

Insulated Gate Bipolar Transistor, 24.5A I(C), 600V V(BR)CES, N-Channel, ECOPAC-10
VDI25-12P1 IXYS

获取价格

Insulated Gate Bipolar Transistor, 30A I(C), 1200V V(BR)CES, N-Channel, ECOPAC-10
VDI50-06P1 IXYS

获取价格

IGBT Modules in ECO-PAC 2