是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | FLANGE MOUNT, R-XUFM-X10 | 针数: | 10 |
Reach Compliance Code: | compliant | 风险等级: | 5.83 |
外壳连接: | ISOLATED | 最大集电极电流 (IC): | 30 A |
集电极-发射极最大电压: | 1200 V | 配置: | SINGLE WITH BUILT-IN DIODE AND THERMISTOR |
JESD-30 代码: | R-XUFM-X10 | JESD-609代码: | e3 |
元件数量: | 1 | 端子数量: | 10 |
封装主体材料: | UNSPECIFIED | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | NO | 端子面层: | Matte Tin (Sn) |
端子形式: | UNSPECIFIED | 端子位置: | UPPER |
处于峰值回流温度下的最长时间: | 35 | 晶体管应用: | MOTOR CONTROL |
晶体管元件材料: | SILICON | 标称断开时间 (toff): | 570 ns |
标称接通时间 (ton): | 175 ns | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
VDI50-06P1 | IXYS |
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IGBT Modules in ECO-PAC 2 |
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VDI50-12P1 | IXYS |
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IGBT Modules |
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VDI50-12S3 | ETC |
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TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CES | 50A I(C) |
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VDI600-03G4 | LITTELFUSE |
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Insulated Gate Bipolar Transistor, 900A I(C), 300V V(BR)CES, N-Channel, |
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VDI75-06P1 | IXYS |
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Insulated Gate Bipolar Transistor, 69A I(C), 600V V(BR)CES, N-Channel, ECOPAC-13 |
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VDI75-12P1 | IXYS |
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IGBT Modules in ECO-PAC 2 Short Circuit SOA Capability Square RBSOA |
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VDI75-12S3 | ETC |
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TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CES | 75A I(C) |
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VDIP1 | FTDI |
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Vinculum VNC1L Prototyping Module |
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VDIP1_10 | FTDI |
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Vinculum VNC1L Module |
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VDIP181X46020 | SCHNEIDER |
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Cable Assembly, |
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