New Product
V20150C, VF20150C, VB20150C & VI20150C
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low V = 0.59 V at I = 5 A
F
F
FEATURES
• Trench MOS Schottky technology
TMBS®
TO-220AB
ITO-220AB
• Low forward voltage drop, low power
losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF
maximum peak of 245 °C (for TO-263AB package)
3
3
2
2
1
1
• Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB
and TO-262AA package)
V20150C
VF20150C
TO-262AA
PIN 1
PIN 3
PIN 1
PIN 3
PIN 2
PIN 2
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
CASE
TO-263AB
K
K
TYPICAL APPLICATIONS
For use in high frequency inverters, switching power
supplies, freewheeling diodes, OR-ing diode, dc-to-dc
converters and reverse battery protection.
2
1
3
2
1
VB20150C
VI20150C
MECHANICAL DATA
PIN 1
PIN 3
PIN 1
PIN 2
K
PIN 2
K
Case: TO-220AB, ITO-220AB, TO-263AB and
HEATSINK
TO-262AA
Epoxy meets UL 94V-0 flammability rating
PRIMARY CHARACTERISTICS
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
IF(AV)
2 x 10 A
VRRM
150 V
120 A
0.69 V
150 °C
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
IFSM
VF at IF = 10 A
TJ max.
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)
A
PARAMETER
SYMBOL
V20150C VF20150C VB20150C VI20150C
UNIT
Maximum repetitive peak reverse voltage
VRRM
150
V
Maximum average forward rectified current
(Fig. 1)
per device
per diode
20
10
IF(AV)
A
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
120
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
VAC
1500
V
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 150
°C
Document Number: 89046
Revision: 19-May-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1