Datasheet > VB20150C-M3

VB20150C-M3

更新时间： 2022-02-26 14:17:53

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	89K
描述
Trench MOS Schottky technology

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

VB20150C-M3 数据手册

VB20150C-M3

Vishay General Semiconductor

www.vishay.com

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Ultra Low V_F= 0.59 V at I_F= 5.0 A

FEATURES

TMBS^®

• Trench MOS Schottky technology

TO-263AB

• Low forward voltage drop, low power losses

• High efficiency operation

• Meets MSL level 1, per J-STD-020, LF maximum

peak of 245 °C

• Material categorization:

For definitions of compliance please see

www.vishay.com/doc?99912

VB20150C

TYPICAL APPLICATIONS

PIN 1

PIN 2

For use in high frequency converters, switching power

supplies, freewheeling diodes, OR-ing diode, DC/DC

converters, and reverse battery protection.

HEATSINK

PRIMARY CHARACTERISTICS

MECHANICAL DATA

Package

TO-263AB

2 x 10 A

150 V

Case: TO-263AB

Molding compound meets UL 94 V-0 flammability rating

I_F(AV)

V_RRM

Base P/N-M3

- halogen-free, RoHS-compliant, and

commercial grade

I_FSM

120 A

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 suffix meets JESD 201 class 1A whisker test

V_Fat I_F= 10 A

T_Jmax.

0.69 V

150 °C

Diode variations

Common cathode

Polarity: As marked

Mounting Torque: 10 in-lbs maximum

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

VB20150C

UNIT

Maximum repetitive peak reverse voltage

V_RRM

150

per device

per diode

Maximum average forward rectified current

(fig. 1)

I_F(AV)

I_FSM

Peak forward surge current 8.3 ms single half sine-wave superimposed

on rated load

120

Voltage rate of change (rated V_R)

dV/dt

10 000

V/μs

°C

Operating junction and storage temperature range

T_J, T_STG

- 55 to + 150

ELECTRICAL CHARACTERISTICS (T_A= 25 °C unless otherwise noted)

PARAMETER

TEST CONDITIONS

SYMBOL

TYP.

MAX.

UNIT

I_F= 5.0 A

0.79

1.05

0.59

0.69

1.3

1.2

1.20

T_A= 25 °C

I_F= 10 A

I_F= 5.0 A

I_F= 10 A

Instantaneous forward voltage

V_F

per diode ⁽¹⁾

T_A= 125 °C

0.75

T_A= 25 °C

T_A= 125 °C

T_A= 25 °C

T_A= 125 °C

μA

V_R= 100 V

V_R= 150 V

Reverse current per diode ⁽²⁾

I_R

150

Notes

(1)

Pulse test: 300 μs pulse width, 1 % duty cycle

Pulse test: Pulse width  40 ms

(2)

Revision: 30-Aug-13

Document Number: 87993

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4

中文翻译

下载PDF

与VB20150C-M3相关器件

型号	品牌	描述	获取价格	数据表
VB20150C-M3_15	VISHAY	Dual High-Voltage Trench MOS Barrier Schottky Rectifier	获取价格
VB20150S	VISHAY	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.55 V at IF = 5 A	获取价格
VB20150S-E3/4W	VISHAY	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.55 V at IF = 5 A	获取价格
VB20150S-E3/8W	VISHAY	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.55 V at IF = 5 A	获取价格
VB20150SG	VISHAY	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.57 V at IF = 5 A	获取价格
VB20150SG-E3/4W	VISHAY	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.57 V at IF = 5 A	获取价格