New Product
V60200PGW
Vishay General Semiconductor
100
10
10 000
TA = 150 °C
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
1000
100
10
TA = 125 °C
TA = 25 °C
1
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.1
1
10
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
100
10
Junction to Case
TA = 150 °C
10
TA = 125 °C
1
1
0.1
0.01
TA = 25 °C
0.001
0.1
20
30
40
50
60
70
80
90
100
0.01
0.1
1
10
100
t - Pulse Duration (s)
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-3PW
0.645 (16.38)
0.175 (4.45)
0.625 (15.87)
0.165 (4.19)
0.551 (14.00)
0.537 (13.64)
0.050 (1.27)
3° Ref.
R0.155 (R3.94)
R0.145 (R3.68)
0.323 (8.20)
0.313 (7.95)
30° Ref.
0.245 (6.23)
0.225 (5.72)
0.077 (1.96)
0.063 (1.60)
0.170 (4.32)
10° Typ.
Both Sides
0.840 (21.34)
0.820 (20.83)
0.467 (11.86)
0.453 (11.51)
0.079 (2.01)
0.065 (1.65)
Ø 0.146 (3.71)
Ø 0.136 (3.45)
0.160 (4.06)
0.140 (3.56)
5° Ref.
Both Sides
3° Ref.
3° Ref.
0.090 (2.29)
0.080 (2.03)
0.098 (2.50)
0.083 (2.12)
0.565 (14.35)
0.545 (13.84)
0.131 (3.33)
0.121 (3.07)
0.048 (1.22)
0.044 (1.12)
0.030 (0.75)
0.020 (0.50)
0.225 (5.72)
0.205 (5.21)
Document Number: 89184
Revision: 09-Feb-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
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