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V58C265164S PDF预览

V58C265164S

更新时间: 2022-11-27 16:17:42
品牌 Logo 应用领域
MOSEL 动态存储器双倍数据速率
页数 文件大小 规格书
44页 451K
描述
64 Mbit DDR SDRAM 2.5 VOLT 4M X 16

V58C265164S 数据手册

 浏览型号V58C265164S的Datasheet PDF文件第2页浏览型号V58C265164S的Datasheet PDF文件第3页浏览型号V58C265164S的Datasheet PDF文件第4页浏览型号V58C265164S的Datasheet PDF文件第5页浏览型号V58C265164S的Datasheet PDF文件第6页浏览型号V58C265164S的Datasheet PDF文件第7页 
V58C265164S  
64 Mbit DDR SDRAM  
2.5 VOLT 4M X 16  
PRELIMINARY  
MOSEL VITELIC  
4
45  
5
55  
System Frequency (f  
)
250 MHz  
4 ns  
225 MHz  
4.5 ns  
200 MHz  
5 ns  
183 MHz  
5.5 ns  
CK  
Clock Cycle Time (t  
Clock Cycle Time (t  
Clock Cycle Time (t  
)
CK3  
)
4.8 ns  
6 ns  
5.4 ns  
6 ns  
6.6 ns  
CK2.5  
)
6.75 ns  
7.5 ns  
8.25 ns  
CK2  
Features  
Description  
4 banks x 1Mbit x 16 organization  
High speed data transfer rates with system  
frequency up to 250 MHz  
The V58C265164S is a four bank DDR DRAM  
organized as  
4 banks x 1Mbit x 16. The  
V58C265164S achieves high speed data transfer  
rates by employing a chip architecture that  
prefetches multiple bits and then synchronizes the  
output data to a system clock  
All of the control, address, circuits are synchro-  
nized with the positive edge of an externally sup-  
plied clock. I/O transactions are possible on both  
edges of DQS.  
Data Mask for Write Control (DM)  
Four Banks controlled by BA0 & BA1  
Programmable CAS Latency: 2, 2.5, 3  
Programmable Wrap Sequence: Sequential  
or Interleave  
Programmable Burst Length:  
2, 4, 8 for Sequential Type  
2, 4, 8 for Interleave Type  
Operating the four memory banks in an inter-  
leaved fashion allows random access operation to  
occur at a higher rate than is possible with standard  
DRAMs. A sequential and gapless data rate is pos-  
sible depending on burst length, CAS latency and  
speed grade of the device.  
Automatic and Controlled Precharge Command  
Suspend Mode and Power Down Mode  
Auto Refresh and Self Refresh  
Refresh Interval: 4096 cycles/64 ms  
Available in 66-pin 400 mil TSOP-II  
SSTL-2 Compatible I/Os  
Double Data Rate (DDR)  
Bidirectional Data Strobe (DQs) for input and  
output data, active on both edges  
On-Chip DLL aligns DQ and DQs transitions with  
CLK transitions  
Differential clock inputs CLK and CLK  
Power supply 2.5V 0.2V  
Device Usage Chart  
Operating  
Temperature  
Range  
Package Outline  
CLK Cycle Time (ns)  
Power  
Std.  
Temperature  
Mark  
JEDEC 66 TSOP II  
-4  
-45  
-5  
-55  
L
0°C to 70°C  
Blank  
V58C265164S Rev. 1.7 August 2001  
1

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