V58C265164S
64 Mbit DDR SDRAM
2.5 VOLT 4M X 16
PRELIMINARY
MOSEL VITELIC
4
45
5
55
System Frequency (f
)
250 MHz
4 ns
225 MHz
4.5 ns
200 MHz
5 ns
183 MHz
5.5 ns
CK
Clock Cycle Time (t
Clock Cycle Time (t
Clock Cycle Time (t
)
CK3
)
4.8 ns
6 ns
5.4 ns
6 ns
6.6 ns
CK2.5
)
6.75 ns
7.5 ns
8.25 ns
CK2
Features
Description
ꢀ 4 banks x 1Mbit x 16 organization
ꢀ High speed data transfer rates with system
frequency up to 250 MHz
The V58C265164S is a four bank DDR DRAM
organized as
4 banks x 1Mbit x 16. The
V58C265164S achieves high speed data transfer
rates by employing a chip architecture that
prefetches multiple bits and then synchronizes the
output data to a system clock
All of the control, address, circuits are synchro-
nized with the positive edge of an externally sup-
plied clock. I/O transactions are possible on both
edges of DQS.
ꢀ Data Mask for Write Control (DM)
ꢀ Four Banks controlled by BA0 & BA1
ꢀ Programmable CAS Latency: 2, 2.5, 3
ꢀ Programmable Wrap Sequence: Sequential
or Interleave
ꢀ Programmable Burst Length:
2, 4, 8 for Sequential Type
2, 4, 8 for Interleave Type
Operating the four memory banks in an inter-
leaved fashion allows random access operation to
occur at a higher rate than is possible with standard
DRAMs. A sequential and gapless data rate is pos-
sible depending on burst length, CAS latency and
speed grade of the device.
ꢀ Automatic and Controlled Precharge Command
ꢀ Suspend Mode and Power Down Mode
ꢀ Auto Refresh and Self Refresh
ꢀ Refresh Interval: 4096 cycles/64 ms
ꢀ Available in 66-pin 400 mil TSOP-II
ꢀ SSTL-2 Compatible I/Os
ꢀ Double Data Rate (DDR)
ꢀ Bidirectional Data Strobe (DQs) for input and
output data, active on both edges
ꢀ On-Chip DLL aligns DQ and DQs transitions with
CLK transitions
ꢀ Differential clock inputs CLK and CLK
ꢀ Power supply 2.5V 0.2V
Device Usage Chart
Operating
Temperature
Range
Package Outline
CLK Cycle Time (ns)
Power
Std.
Temperature
Mark
JEDEC 66 TSOP II
-4
-45
-5
-55
L
0°C to 70°C
•
•
•
•
•
•
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V58C265164S Rev. 1.7 August 2001
1