Datasheet > V50100P_08

V50100P_08

更新时间： 2022-12-16 16:38:09

品牌	Logo	应用领域
威世 - VISHAY		高压
页数	文件大小	规格书
4页	104K
描述
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.375 V at IF = 5 A

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V50100P_08 数据手册

New Product

V50100P

Vishay General Semiconductor

100

10 000

T_J= 150 °C

T_J= 125 °C

1000

T_J= 100 °C

T_J= 25 °C

0.1

100

0.2

0.4

0.6

0.8

1.0

0.1

Instantaneous Forward Voltage (V)

Reverse Voltage (V)

Figure 3. Typical Instantaneous Forward Characteristics Per Diode

Figure 5. Typical Junction Capacitance Per Diode

100

T_J= 150 °C

T_J= 125 °C

T_J= 100 °C

0.1

T_J= 25 °C

0.01

0.001

0.1

0.01

0.1

100

90 100

Percent of Rated Peak Reverse Voltage (%)

t - Pulse Duration (s)

Figure 4. Typical Reverse Characteristics Per Diode

Figure 6. Typical Transient Thermal Impedance Per Diode

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

TO-247AD (TO-3P)

0.245 (6.2)

0.225 (5.7)

0.645 (16.4)

0.625 (15.9)

0.203 (5.16)

0.193 (4.90)

0.078 (1.98) REF.

0.323 (8.2)

0.313 (7.9)

30°

0.170

(4.3)

10° TYP.

0.840 (21.3)

0.820 (20.8)

Both Sides

0.142 (3.6)

0.138 (3.5)

1° REF.

Both Sides

0.086 (2.18)

0.076 (1.93)

0.118 (3.0)

0.108 (2.7)

0.127 (3.22)

0.117 (2.97)

0.160 (4.1)

0.140 (3.5)

0.795 (20.2)

0.775 (19.6)

0.030 (0.76)

0.020 (0.51)

0.225 (5.7)

0.205 (5.2)

0.048 (1.22)

0.044 (1.12)

PIN 2

CASE

PIN 1

PIN 3

Document Number: 88929

Revision: 26-May-08

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

www.vishay.com

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