Datasheet > V23990-P862-F49-PM

V23990-P862-F49-PM

更新时间： 2023-09-03 20:33:09

品牌	Logo	应用领域
VINCOTECH		/
页数	文件大小	规格书
18页	7482K
描述
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current

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V23990-P862-F49-PM

datasheet

Inverter Switch Characteristics

figure 5.

IGBT

figure 6.

IGBT

Transient thermal impedance as a function of pulse width

Typical short circuit current as a function of V_GE

I_SC= f(V_GE

)

Z_th(j-s)= f(t_p)

275

250

225

200

175

150

125

100

-1

0,5

0,2

0,1

-2

0,05

0,02

0,01

0,005

-3

-5

-4

-3

-2

-1

t_p(s)

_GE(V)

V_CE

400

150

D =

t_p/ T

1,834

T_j≤

°C

R_th(j-s)=

K/W

IGBT thermal model values

R (K/W)

τ (s)

8,30E-02

3,76E-01

8,46E-01

2,81E-01

1,16E-01

1,32E-01

1,29E+00

1,56E-01

5,15E-02

8,16E-03

2,04E-03

3,43E-04

figure 7.

IGBT

figure 8.

IGBT

Safe operating area

Gate voltage vs gate charge

I_C= f(V_CE

)

V_GE= f(Q_g)

100

17,5

15,0

12,5

10,0

7,5

10µs

100µs

1ms

10ms

5,0

100ms

0,1

0,01

2,5

0,0

100

1000

10000

100

_CE(V)

Q_g(μC)

D =

I_C

single pulse

T_s=

T_j=

°C

V_GE

T_j=

T_jmax

10 Sep. 2021 / Revision 5

1...4 5 678 9 10...18

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