Datasheet > V23990-P840-A58Y-PM

V23990-P840-A58Y-PM

更新时间： 2023-09-03 20:38:13

品牌	Logo	应用领域
VINCOTECH		/
页数	文件大小	规格书
29页	8945K
描述
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current

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V23990-P840-A58Y-PM

datasheet

Characteristic Values

Symbol

Parameter

Conditions

Values

Typ

Unit

V_CE[V] I_C[A]

V_DS[V] I_D[A] T_j[°C]

V_GE[V]

V_GS[V]

Min

Max

V_F[V]

I_F[A]

Inverter Diode

Static

1,35

1,76

1,72

2,05⁽¹⁾

V_F

I_R

Forward voltage

125

150

Reverse leakage current

Thermal

V_r= 1200 V

3,5

µA

λ_paste= 3,4 W/mK

(PSX)

(2)

R_th(j-s)

Thermal resistance junction to sink

Dynamic

1,78

K/W

13,3

16,06

16,46

281,61

433,43

452,84

1,59

I_RRM

Peak recovery current

125

150

t_rr

Reverse recovery time

125

150

di/dt=801 A/µs

di/dt=1058 A/µs

di/dt=1081 A/µs

Q_r

Recovered charge

±15

600

125

150

2,75

μC

2,98

0,65

E_rec

Reverse recovered energy

Peak rate of fall of recovery current

125

150

1,16

mWs

A/µs

1,25

129,01

108,84

103,64

(di_rf/dt)_max

125

150

30 Sep. 2021 / Revision 8

1 2 3 456 7 8...29

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