Datasheet > V23990-P848-X4X-P1-14

V23990-P848-X4X-P1-14

更新时间： 2024-11-25 01:03:59

品牌	Logo	应用领域
VINCOTECH		/
页数	文件大小	规格书
22页	1618K
描述
Industrial Drives Embedded Generation

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中文翻译

获取价格

数据手册

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V23990-P848-X4X-P1-14 数据手册

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V23990-P848-A48/A49/C48/C49-PM

preliminary datasheet

flowPIM 2 3rd

1200V/4A

Features

flow0 Housing

● 2 Clips housing in 12 and 17mm height

● Trench Fieldstop Technology IGBT4

● Optional w/o BRC

Target Applications

● Industrial Drives

Schematics

● Embedded Generation

Types

● V23990-P848-A48-PM 12mm height

● V23990-P848-A49-PM 17mm height

● V23990ꢀP848ꢀC48ꢀPM 12mm height; w/o BRC

● V23990ꢀP848ꢀC49ꢀPM 17mm height; w/o BRC

Maximum Ratings

Tj=25°C, unless otherwise specified

Value

Condition

Parameter

Symbol

Unit

Input Rectifier Diode

Repetitive peak reverse voltage

Forward current per diode

Surge forward current

V_RRM

I_FAV

1600

T_h=80°C

T_c=80°C

DC current

t_p=10ms

I_FSM

220

T_j=25°C

I²t

A²s

I2t-value

240

T_h=80°C

T_c=80°C

P_tot

T_j=T_jmax

Power dissipation per Diode

Maximum Junction Temperature

T_jmax

150

°C

Inverter Transistor

V_CE

I_C

I_Cpulse

P_tot

Collector-emitter break down voltage

DC collector current

1200

T_h=80°C

T_c=80°C

T_h=80°C

T_c=80°C

T_h=80°C

T_c=80°C

T_j=T_jmax

t_plimited by T_jmax

T_j=T_jmax

Repetitive peak collector current

Power dissipation per IGBT

Gate-emitter peak voltage

Short circuit ratings

V_GE

±20

t_SC

T_j≤150°C

µs

V_CC

V_GE=15V

800

T_jmax

Maximum Junction Temperature

175

°C

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