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V23990-P840-C48-PM PDF预览

V23990-P840-C48-PM

更新时间: 2024-10-29 11:08:15
品牌 Logo 应用领域
VINCOTECH /
页数 文件大小 规格书
24页 1272K
描述
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current

V23990-P840-C48-PM 数据手册

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V23990-P840-*4*-PM  
datasheet  
flow PIM 0 3rd gen  
Features  
1200 V / 15 A  
flow 0 housing  
● 2 Clips housing in 12 and 17mm height  
● Trench Fieldstop Technology IGBT4  
● Optional w/o BRC  
12mm housing  
17mm housing  
Target Applications  
● Industrial Drives  
Schematic  
● Embedded Generation  
Types  
● V23990-P840-A48-PM  
● V23990-P840-A49-PM  
● V23990-P840-C48-PM  
● V23990-P840-C49-PM  
Maximum Ratings  
T j=25°C, unless otherwise specified  
Condition  
Parameter  
Symbol  
Value  
Unit  
Rectifier Diode  
Repetitive peak reverse voltage  
DC forward current  
V RRM  
I FAV  
I FSM  
1600  
V
A
T s = 80°C  
T c = 80°C  
27  
30  
T j = T jmax  
t p = 10 ms  
T j = T jmax  
Surge forward current  
I2t-value  
220  
200  
A
I 2  
t
A2s  
W
°C  
T s = 80°C  
T c = 80°C  
33  
50  
P tot  
Power dissipation  
T jmax  
Maximum Junction Temperature  
150  
Inverter IGBT  
V CE  
I C  
Collector-emitter break down voltage  
1200  
V
A
T s = 80°C  
T c = 80°C  
18  
24  
T j = T jmax  
DC collector current  
I CRM  
t p limited by T jmax  
Pulsed collector current  
Turn off safe operating area  
Power dissipation  
45  
30  
A
V CE ≤ 1200 V, T j T op max  
T j = T jmax  
A
T s = 80°C  
T c = 80°C  
52  
79  
P tot  
V GE  
W
V
Gate-emitter peak voltage  
Short circuit ratings  
±20  
t SC  
V CC  
T j ≤ 150 °C  
V GE = 15 V  
10  
µs  
V
800  
T jmax  
Maximum Junction Temperature  
175  
°C  
copyright Vincotech  
1
19 Mar. 2016 / Revision 7  

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