Datasheet > V23990-P840-A58Y-PM

V23990-P840-A58Y-PM

更新时间： 2023-09-03 20:38:13

品牌	Logo	应用领域
VINCOTECH		/
页数	文件大小	规格书
29页	8945K
描述
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current

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V23990-P840-A58Y-PM

datasheet

Characteristic Values

Symbol

Parameter

Conditions

Values

Typ

Unit

V_CE[V] I_C[A]

V_DS[V] I_D[A] T_j[°C]

V_GE[V]

V_GS[V]

Min

Max

V_F[V]

I_F[A]

Inverter Switch

Static

V_GE(th)

Gate-emitter threshold voltage

V_CE= V_GE

0,0005

5,3

5,8

6,3

1,58

1,87

2,14

2,21

2,07⁽¹⁾

V_CEsat

Collector-emitter saturation voltage

125

150

I_CES

I_GES

r_g

Collector-emitter cut-off current

Gate-emitter leakage current

Internal gate resistance

Input capacitance

1200

µA

120

None

890

C_ies

C_res

Q_g

f = 1 Mhz

Reverse transfer capacitance

Gate charge

120

Thermal

λ_paste= 3,4 W/mK

(PSX)

(2)

R_th(j-s)

Thermal resistance junction to sink

Dynamic

1,45

K/W

59,6

60,4

t_d(on)

Turn-on delay time

Rise time

125

150

14,8

t_r

125

150

R_gon= 16 Ω

R_goff= 16 Ω

196,6

238,8

251,6

79,13

105,52

110,2

0,881

1,25

1,36

0,883

1,24

1,33

t_d(off)

Turn-off delay time

Fall time

125

150

±15

600

t_f

125

150

Q_rFWD=1,59 µC

Q_rFWD=2,75 µC

Q_rFWD=2,98 µC

E_on

Turn-on energy (per pulse)

Turn-off energy (per pulse)

125

150

mWs

E_off

125

150

30 Sep. 2021 / Revision 8

1 2 345 6 7...29

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