Datasheet > V23990-K209-A-/0B/-PM

V23990-K209-A-/0B/-PM

更新时间： 2024-02-02 06:50:38

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VINCOTECH		/
页数	文件大小	规格书
17页	2488K
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V23990-K209-A-/0B/-PM 数据手册

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V23990-K209-A-PM

datasheet

MiniSKiiP® 1 PIM

1200V / 8A

MiniSKiiP^®1 housing

Features

● Solderless interconnection

● Trench Fieldstop IGBT3 technology

Target Applications

Schematic

● Industrial drives

Types

● V23990-K209-A-PM

Maximum Ratings

T_j=25°C, unless otherwise specified

Condition

Parameter

Symbol

Value

Unit

D8,D9,D10,D11,D12,D13

Repetitive peak reverse voltage

DC forward current

V_RRM

I_FAV

1600

T_h=80°C

T_j=T_jmax

I_FSM

Surge forward current

220

240

t_p=10ms

T_j=25°C

T_h=80°C

half sine wave

I²t-value

I²t

A²s

P_tot

T_j=T_jmax

Power dissipation

Maximum Junction Temperature

T_jmax

150

°C

T1,T2,T3,T4,T5,T6,T7

Collector-emitter break down voltage

DC collector current

V_CE

I_C

I_Cpulse

P_tot

1200

T_h=80°C

T_j=T_jmax

t_plimited by T_jmax

T_j=T_jmax

Repetitive peak collector current

Power dissipation

V_GE

Gate-emitter peak voltage

Short circuit ratings

±20

t_SC

T_j≤150°C

µs

V_CC

V_GE=15V

900

T_jmax

Maximum Junction Temperature

175

°C

Revision: 3

12 3 4 5 6 7...17

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