V20M120M-E3
Vishay General Semiconductor
www.vishay.com
Dual High Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.58 V at IF = 5 A
FEATURES
TMBS®
TO-220AB
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder dip 275 °C max. 10 s, per
JESD 22-B106
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
V20M120M
PIN 1
PIN 3
PIN 2
TYPICAL APPLICATIONS
CASE
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
MECHANICAL DATA
PRIMARY CHARACTERISTICS
Case: TO-220AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
IF(AV)
2 x 10 A
120 V
VRRM
IFSM
110 A
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
VF at IF = 10 A (TA = 125 °C)
TJ max.
0.68 V
175 °C
TO-220AB
Polarity: As marked
Package
Diode variations
Common cathode
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V20M120M
UNIT
Maximum repetitive peak reverse voltage
VRRM
120
20
V
per device
per diode
Maximum average forward rectified current
(fig. 1)
IF(AV)
A
10
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
110
A
Voltage rate of change (rated VR)
dV/dt
10 000
V/μs
°C
Operating junction and storage temperature range
TJ, TSTG
-55 to +175
Revision: 11-Sep-13
Document Number: 89987
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000