Datasheet > V12PM45HM3/I

V12PM45HM3/I

更新时间： 2022-06-24 15:41:23

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	107K
描述
High Current Density Surface-Mount TMBSÂ® (Trench MOS Barrier Schottky) Rectifier

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V12PM45HM3/I 数据手册

V12PM45

Vishay General Semiconductor

www.vishay.com

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

SMPC (TO-277A)

0.187 (4.75)

0.175 (4.45)

0.016 (0.40)

0.006 (0.15)

0.262 (6.65)

0.250 (6.35)

0.242 (6.15)

0.238 (6.05)

0.047 (1.20)

0.039 (1.00)

0.171 (4.35)

0.167 (4.25)

0.146 (3.70)

0.134 (3.40)

Mounting Pad Layout

0.087 (2.20)

0.075 (1.90)

0.189 (4.80)

MIN.

0.189 (4.80)

0.173 (4.40)

0.186 (4.72)

MIN.

0.268

(6.80)

0.155 (3.94)

NOM.

0.030 (0.75) NOM.

0.049 (1.24)

0.037 (0.94)

0.050 (1.27)

MIN.

0.084 (2.13) NOM.

0.053 (1.35)

0.041 (1.05)

0.041

(1.04)

0.055 (1.40)

MIN.

Conform to JEDEC TO-277A

Revision: 08-Nov-2018

Document Number: 87439

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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