Datasheet > V12PM45

V12PM45

更新时间： 2023-12-18 00:00:00

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	107K
描述
High Current Density Surface-Mount TMBSÂ® (Trench MOS Barrier Schottky) Rectifier

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V12PM45 数据手册

V12PM45

Vishay General Semiconductor

www.vishay.com

RATINGS AND CHARACTERISTICS CURVES (T_A= 25 °C unless otherwise noted)

Axis Title

R_thJM= 4.0 °C/W

Axis Title

10000

1000

100

10000

1000

100

T_J= 175 °C

0.1

T_J= 150 °C

T_J= 125 °C

T_J= 100 °C

0.01

R_thJA= 75 °C/W

T_J= 25 °C

0.001

0.0001

0.00001

0.000001

T_Mmeasured at cathode

terminal mount typical values

T_J= -40 °C

25 50 75 100 125 150 175

Mount Temperature (°C)

100

Percent of Rated Peak Reverse Voltage (%)

Fig. 1 - Forward Current Derating Curve

Fig. 4 - Typical Reverse Leakage Characteristics Per Diode

Axis Title

8.0

7.0

6.0

5.0

4.0

3.0

2.0

1.0

10000

1000

100

10 000

1000

100

10000

1000

100

T_J= 25 °C

D = 0.8

D = 0.5

f = 1.0 MHz

V_sig= 50 mV_p-p

D = 0.3

D = 1.0

D = 0.2

D = 0.1

D = t_p/T

t_p

10 11 12 13 14

0.1

100

Average Forward Current (A)

Reverse Voltage (V)

Fig. 2 - Forward Power Loss Characteristics

Fig. 5 - Typical Junction Capacitance

Axis Title

100

10000

1000

100

10000

1000

100

Junction to ambient

T_J= 175 °C

T_J= 150 °C

T_J= 125 °C

T_J= 100 °C

T_J= 25 °C

T_J= -40 °C

0.1

0.2

0.4

0.6

0.8

0.01

0.1

100

Instantaneous Forward Voltage (V)

t - Pulse Duration (s)

Fig. 3 - Typical Instantaneous Forward Characteristics

Fig. 6 - Typical Transient Thermal Impedance

Revision: 08-Nov-2018

Document Number: 87439

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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