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UT4411G-S08-T PDF预览

UT4411G-S08-T

更新时间: 2024-10-02 20:47:51
品牌 Logo 应用领域
友顺 - UTC 开关脉冲光电二极管晶体管
页数 文件大小 规格书
6页 262K
描述
Power Field-Effect Transistor, 8A I(D), 30V, 0.032ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE, SOP-8

UT4411G-S08-T 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:SOT包装说明:SMALL OUTLINE, R-PDSO-G8
针数:8Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:5.68配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (ID):8 A
最大漏源导通电阻:0.032 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G8元件数量:1
端子数量:8工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:P-CHANNEL最大脉冲漏极电流 (IDM):40 A
表面贴装:YES端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

UT4411G-S08-T 数据手册

 浏览型号UT4411G-S08-T的Datasheet PDF文件第2页浏览型号UT4411G-S08-T的Datasheet PDF文件第3页浏览型号UT4411G-S08-T的Datasheet PDF文件第4页浏览型号UT4411G-S08-T的Datasheet PDF文件第5页浏览型号UT4411G-S08-T的Datasheet PDF文件第6页 
UNISONIC TECHNOLOGIES CO., LTD  
UT4411  
Power MOSFET  
P-CHANNEL  
ENHANCEMENT MODE  
„
DESCRIPTION  
The UT4411 uses advanced trench technology to provide  
excellent RDS(ON), low gate charge and operation with low gate  
voltages. This device is suitable for use as a load switch or in  
PWM applications.  
„
FEATURES  
* RDS(ON) = 32m@VGS = 10 V  
* Low capacitance  
* Optimized gate charge  
* Fast switching capability  
* Avalanche energy specified  
Lead-free:  
UT4411L  
Halogen-free : UT4411G  
„
SYMBOL  
Drain  
Gate  
Source  
„ ORDERING INFORMATION  
Ordering Number  
Package  
Packing  
Normal  
Lead Free Plating  
UT4411L-S08-R  
UT4411L-S08-T  
Halogen Free  
UT4411-S08-R  
UT4411-S08-T  
UT4411G-S08-R  
UT4411G-S08-T  
SOP-8  
SOP-8  
Tape Reel  
Tube  
www.unisonic.com.tw  
Copyright © 2008 Unisonic Technologies Co., Ltd  
1 of 6  
QW-R502-191.B  

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