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UT3055G-TM3-T PDF预览

UT3055G-TM3-T

更新时间: 2024-01-31 08:51:21
品牌 Logo 应用领域
友顺 - UTC 晶体管
页数 文件大小 规格书
2页 153K
描述
Power Field-Effect Transistor, 12A I(D), 25V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, HALOGEN FREE PACKAGE-3

UT3055G-TM3-T 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:TO-251包装说明:IN-LINE, R-PSIP-T3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.67
其他特性:LOGIC LEVEL COMPATIBLE配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:25 V最大漏极电流 (ID):12 A
最大漏源导通电阻:0.095 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-251JESD-30 代码:R-PSIP-T3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICONBase Number Matches:1

UT3055G-TM3-T 数据手册

 浏览型号UT3055G-TM3-T的Datasheet PDF文件第2页 
UNISONIC TECHNOLOGIES CO., LTD  
UT3055  
Power MOSFET  
12A, 25V N-CHANNEL  
POWER MOSFET  
1
„
DESCRIPTION  
TO-252  
TO-251  
The UTC UT3055 is N-Channel logic level enhancement  
mode field effect transistor.  
„
SYMBOL  
2.Drain  
1
1.Gate  
3.Source  
„ ORDERING INFORMATION  
Ordering Number  
Pin Assignment  
Package  
Packing  
Lead Free  
Halogen Free  
1
2
D
D
D
3
UT3055-TM3-T  
UT3055-TN3-R  
UT3055-TN3-T  
UT3055L-TM3-T  
UT3055L-TN3-R  
UT3055L-TN3-T  
TO-251  
TO-252  
TO-252  
G
G
G
S
S
S
Tube  
Tape Reel  
Tube  
www.unisonic.com.tw  
1 of 2  
Copyright © 2011 Unisonic Technologies Co., Ltd  
QW-R502-158.Ba  

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