是否Rohs认证: | 符合 | 生命周期: | Active |
零件包装代码: | TO-251 | 包装说明: | IN-LINE, R-PSIP-T3 |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.67 |
其他特性: | LOGIC LEVEL COMPATIBLE | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 25 V | 最大漏极电流 (ID): | 12 A |
最大漏源导通电阻: | 0.095 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-251 | JESD-30 代码: | R-PSIP-T3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
UT3055G-TN3-R | UTC |
获取价格 |
暂无描述 |
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UT3055G-TN3-T | UTC |
获取价格 |
Power Field-Effect Transistor, 12A I(D), 25V, 0.095ohm, 1-Element, N-Channel, Silicon, Met |
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UT3055L-TM3-T | UTC |
获取价格 |
Power Field-Effect Transistor, 12A I(D), 25V, 0.095ohm, 1-Element, N-Channel, Silicon, Met |
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UT3055L-TN3-R | UTC |
获取价格 |
12A, 25V N-CHANNEL POWER MOSFET |
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UT3055L-TN3-T | UTC |
获取价格 |
Power Field-Effect Transistor, 12A I(D), 25V, 0.095ohm, 1-Element, N-Channel, Silicon, Met |
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UT3055-TM3-T | UTC |
获取价格 |
Transistor |
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UT3055-TN3-R | UTC |
获取价格 |
Power Field-Effect Transistor, 12A I(D), 25V, 0.095ohm, 1-Element, N-Channel, Silicon, Met |
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UT3055-TN3-T | UTC |
获取价格 |
Power Field-Effect Transistor, 12A I(D), 25V, 0.095ohm, 1-Element, N-Channel, Silicon, Met |
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UT3060 | MICROSEMI |
获取价格 |
RECTIFIERS |
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UT3060E3 | MICROSEMI |
获取价格 |
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon, ROHS COMPLIANT, |
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