Datasheet > UT136N03L-TQ2-T

UT136N03L-TQ2-T

更新时间： 2024-11-24 07:08:59

品牌	Logo	应用领域
友顺 - UTC		/
页数	文件大小	规格书
3页	149K
描述
N-CHANNEL ENHANCEMENT MODE

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UT136N03L-TQ2-T 数据手册

UNISONIC TECHNOLOGIES CO., LTD

UT136N03

Preliminary

Power MOSFET

N-CHANNEL

ENHANCEMENT MODE

DESCRIPTION

The UT136N03 uses advanced trench technology to

provide excellent R_DS(ON), low gate charge and operation with

low gate voltages. This device is suitable for use as a load

switch or in PWM applications.

FEATURES

* V_DS(V)= 30 V

* I_D=136 A

* R_DS(ON)= 4.5mΩ@V_GS=10 V

* R_DS(ON)= 5.6mΩ@V_GS=4.5 V

SYMBOL

2.Drain

1.Gate

3.Source

ORDERING INFORMATION

Ordering Number

Pin Assignment

Package

Packing

Lead Free

Halogen Free

UT136N03L-TA3-R

UT136N03L-TQ2-T

UT136N03L-TQ2-R

UT136N03G-TA3-T

UT136N03G-TQ2-T

UT136N03G-TQ2-R

TO-220

TO-263

Tube

Tape Reel

www.unisonic.com.tw

1 of 5

QW-R502-459.a

12 3

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