Datasheet > USBLC6-2_08

USBLC6-2_08

更新时间： 2024-02-08 19:46:13

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
14页	235K
描述
Very low capacitance ESD protection

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中文翻译

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数据手册

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USBLC6-2_08 数据手册

USBLC6-2

Very low capacitance ESD protection

Features

■ 2 data lines protection

■ Protects V_BUS

■ Very low capacitance: 3.5 pF max.

■ Very low leakage current: 150 nA max.

■ SOT-666 and SOT23-6L packages

■ RoHS compliant

SOT23-6L

USBLC6-2SC6

SOT-666

USBLC6-2P6

Applications

Benefits

■ Very low capacitance between lines to GND for

■ USB 2.0 ports up to 480 Mb/s (high speed)

■ Compatible with USB 1.1 low and full speed

■ Ethernet port: 10/100 Mb/s

■ SIM card protection

optimized data integrity and speed

■ Low PCB space consumption: 2.9 mm²max for

SOT-666 and 9mm² max for SOT23-6L

■ Enhanced ESD protection. IEC 61000-4-2 level

4 compliance guaranteed at device level,

hence greater immunity at system level

■ Video line protection

■ Portable electronics

■ ESD protection of V_BUS

■ High reliability offered by monolithic integration

Description

■ Low leakage current for longer operation of

The USBLC6-2SC6 and USBLC6-2P6 are

monolithic application specific devices dedicated

to ESD protection of high speed interfaces, such

as USB 2.0, Ethernet links and video lines.

battery powered devices

■ Fast response time

■ Consistent D+ / D- signal balance:

– Very low capacitance matching tolerance

I/O to GND = 0.015 pF

The very low line capacitance secures a high level

of signal integrity without compromising in

protecting sensitive chips against the most

stringent characterized ESD strikes.

– Compliant with USB 2.0 requirements

Complies with the following standards

■ IEC 61000-4-2 level 4:

– 15 kV (air discharge)

– 8 kV (contact discharge)

Figure 1.

Functional diagram

I/O1

GND

I/O2

V_BUS

I/O2

March 2008

Rev 3

1/14

www.st.com

12 3 4 5 6 7...14

中文翻译

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