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US1D-E3/5AT PDF预览

US1D-E3/5AT

更新时间: 2024-01-02 06:28:20
品牌 Logo 应用领域
威世 - VISHAY 光电二极管
页数 文件大小 规格书
5页 79K
描述
DIODE 1 A, 200 V, SILICON, SIGNAL DIODE, DO-214AC, ROHS COMPLIANT, PLASTIC, SMA, 2 PIN, Signal Diode

US1D-E3/5AT 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:DO-214AC
包装说明:R-PDSO-C2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.21
其他特性:FREE WHEELING DIODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1 VJEDEC-95代码:DO-214AC
JESD-30 代码:R-PDSO-C2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:30 A
元件数量:1端子数量:2
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:1 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260认证状态:Not Qualified
最大重复峰值反向电压:200 V最大反向恢复时间:0.05 µs
子类别:Rectifier Diodes表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:C BEND
端子位置:DUAL处于峰值回流温度下的最长时间:40
Base Number Matches:1

US1D-E3/5AT 数据手册

 浏览型号US1D-E3/5AT的Datasheet PDF文件第1页浏览型号US1D-E3/5AT的Datasheet PDF文件第3页浏览型号US1D-E3/5AT的Datasheet PDF文件第4页浏览型号US1D-E3/5AT的Datasheet PDF文件第5页 
US1A, US1B, US1D, US1G, US1J, US1K, US1M  
www.vishay.com  
Vishay General Semiconductor  
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)  
PARAMETER  
TEST CONDITIONS SYMBOL US1A US1B US1D US1G US1J US1K US1M UNIT  
Maximum instantaneous forward  
voltage  
(1)  
1.0 A  
VF  
1.0  
1.7  
V
TA = 25 °C  
TA = 100 °C  
10  
50  
Maximum DC reverse current  
at rated DC blocking voltage  
IR  
μA  
IF = 0.5 A, IR = 1.0 A,  
rr = 0.25 A  
Maximum reverse recovery time  
Typical junction capacitance  
trr  
50  
15  
75  
10  
ns  
I
4.0 V, 1 MHz  
CJ  
pF  
Note  
(1)  
Pulse test: 300 μs pulse width, 1 % duty cycle  
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL US1A US1B US1D US1G US1J US1K US1M UNIT  
(1)  
RJA  
RJL  
75  
27  
Maximum thermal resistance  
°C/W  
(1)  
Note  
(1)  
PCB mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad area  
ORDERING INFORMATION (Example)  
PREFERRED P/N  
UNIT WEIGHT (g)  
PREFERRED PACKAGE CODE  
BASE QUANTITY  
DELIVERY MODE  
US1J-E3/61T  
0.064  
61T  
5AT  
61T  
5AT  
H
1800  
7500  
1800  
7500  
1800  
7500  
7" diameter plastic tape and reel  
13" diameter plastic tape and reel  
7" diameter plastic tape and reel  
13" diameter plastic tape and reel  
7" diameter plastic tape and reel  
13" diameter plastic tape and reel  
US1J-E3/5AT  
0.064  
US1JHE3/61T (1)  
US1JHE3/5AT (1)  
US1JHE3_A/H (1)  
US1JHE3_A/I (1)  
0.064  
0.064  
0.064  
0.064  
I
Note  
(1)  
AEC-Q101 qualified  
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0
30  
25  
20  
15  
10  
5
Resistive or Inductive Load  
TL = 110 °C  
8.3 ms Single Half Sine-Wave  
0.2" x 0.2" (5.0 mm x 5.0 mm)  
Copper Pad Areas  
0
1
10  
100  
0
100  
Lead Temperature (°C)  
125  
25  
50  
75  
150  
Number of Cycles at 60 Hz  
Fig. 1 - Forward Current Derating Curve  
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current  
Revision: 30-Oct-13  
Document Number: 88768  
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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