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URSF05G49-5P PDF预览

URSF05G49-5P

更新时间: 2024-11-28 22:17:07
品牌 Logo 应用领域
东芝 - TOSHIBA 局域网
页数 文件大小 规格书
6页 246K
描述
TOSHIBA THYRISTOR SILICON PLANAR TYPE

URSF05G49-5P 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete包装说明:SMALL OUTLINE, R-PSSO-F3
针数:3Reach Compliance Code:unknown
风险等级:5.85配置:SINGLE WITH BUILT-IN RESISTOR BETWEEN GATE AND CATHODE
最大直流栅极触发电流:0.25 mA最大直流栅极触发电压:0.8 V
最大维持电流:2 mAJESD-30 代码:R-PSSO-F3
最大漏电流:0.01 mA通态非重复峰值电流:9 A
元件数量:1端子数量:3
最大通态电流:500 A最高工作温度:125 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大均方根通态电流:0.8 A重复峰值关态漏电流最大值:10 µA
断态重复峰值电压:400 V重复峰值反向电压:400 V
子类别:Silicon Controlled Rectifiers表面贴装:YES
端子形式:FLAT端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED触发设备类型:SCR

URSF05G49-5P 数据手册

 浏览型号URSF05G49-5P的Datasheet PDF文件第2页浏览型号URSF05G49-5P的Datasheet PDF文件第3页浏览型号URSF05G49-5P的Datasheet PDF文件第4页浏览型号URSF05G49-5P的Datasheet PDF文件第5页浏览型号URSF05G49-5P的Datasheet PDF文件第6页 
URSF05G49-1P,URSF05G49-3P,URSF05G49-5P  
TOSHIBA THYRISTOR SILICON PLANAR TYPE  
URSF05G49-1P,URSF05G49-3P,URSF05G49-5P  
Unit: mm  
LOW POWER SWITCHING AND CONTROL  
APPLICATIONS  
l Repetitive Peak OffState Voltage: V  
= 400V  
= 400V  
DRM  
RRM  
Repetitive Peak Reverse Voltage : V  
l Average OnState Current  
: I  
= 500mA  
T (AV)  
l Reduce a Quantity of Parts and Manufacturing  
Process Because of Builtin R  
: R = 1k, 2.7k, 5.1k(Typ.)  
GK  
GK  
MAXIMUM RATINGS  
CHARACTERISTIC  
SYMBOL  
RATINGS  
400  
UNIT  
V
Repetitive Peak OffState Voltage  
V
V
DRM  
RRM  
and Repetitive Peak Reverse Voltage  
NonRepetitive Peak Reverse  
Voltage (NonRepetitive<5ms,  
V
500  
V
RSM  
T = 0~125°C)  
j
Average OnState Current  
I
500  
mA  
mA  
T (AV)  
(Half Sine Waveform)  
JEDEC  
JEITA  
R.M.S OnState Current  
I
800  
9 (50Hz)  
10 (60Hz)  
0.4  
T (RMS)  
Peak One Cycle Surge OnState  
Current (NonRepetitive)  
TOSHIBA  
Weight: 0.2 g  
135B1A  
I
A
TSM  
2
2
2
I t Limit Value  
I t  
A s  
Critical Rate of Rise of OnState  
di / dt  
10  
A /  
µs  
Current  
(Note 1)  
EQUIVALENT CIRCUIT  
Peak Gate Power Dissipation  
Average Gate Power Dissipation  
Peak Forward Gate Voltage  
Peak Reverse Gate Voltage  
Peak Forward Gate Current  
Junction Temperature  
P
0.1  
0.01  
W
GM  
P
W
V
G(AV)  
V
3.5  
FGM  
V
5  
V
RGM  
I
125  
mA  
°C  
°C  
GM  
T
40~125  
40~125  
j
Storage Temperature Range  
T
stg  
NOTE 1: di / dt Test condition  
i
= 5mA, t =10µs,  
G
gw  
t
250ns  
gr  
1
2001-07-11  

URSF05G49-5P 替代型号

型号 品牌 替代类型 描述 数据表
CR05AS-8 RENESAS

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