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URF1060C PDF预览

URF1060C

更新时间: 2024-11-15 00:51:07
品牌 Logo 应用领域
THINKISEMI /
页数 文件大小 规格书
2页 287K
描述
10.0 Ampere Insulated Dual Common Anode Ultra Fast Recovery Rectifiers

URF1060C 数据手册

 浏览型号URF1060C的Datasheet PDF文件第2页 
URF1020A thru URF1060A  
URF1020A/URF1040A/URF1060A  
Pb Free Plating Product  
10.0 Ampere Insulated Dual Common Anode Ultra Fast Recovery Rectifiers  
ITO-220AB(TO-220F-3L)  
Unit:inch(mm)  
Features  
.189(4.8)  
.165(4.2)  
Fast switching for high efficiency  
Low forward voltage drop  
High current capability  
Low reverse leakage current  
High surge current capability  
.406(10.3)  
.381(9.7)  
.134(3.4)  
.118(3.0)  
.130(3.3)  
.114(2.9)  
Application  
Automotive Inverters and Solar Inverters  
Car Audio Amplifiers and Sound Device Systems  
Plating Power Supply,Motor Control,UPS and SMPS etc.  
.114(2.9)  
.098(2.5)  
.071(1.8)  
.055(1.4)  
.055(1.4)  
.039(1.0)  
.035(0.9)  
.011(0.3)  
.032(.8)  
MAX  
Mechanical Data  
.1  
.1  
Case: Full Plastic Isolated Package ITO-220AB  
Epoxy: UL 94V-0 rate flame retardant  
Terminals: Solderable per MIL-STD-202 method 208  
Polarity: As marked on diode body  
Mounting position: Any  
(2.55)  
(2.55)  
Case  
Case  
Case  
Case  
Weight: 2.0 gram approximately  
Doubler  
Series  
Negative  
Positive  
Tandem Polarity  
Suffix "D"  
Tandem Polarity  
Suffix "S"  
Common Cathode  
Suffix "C"  
Common Anode  
Suffix "A"  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating at 25ambient temperature unless otherwise specified.  
Single phase,half wave,60Hz,resistive or inductive load.  
For capacitive load, derate current by 20%.  
URF1020C URF1040C URF1060C  
URF1020A URF1040A URF1060A  
URF1020D URF1040D URF1060D  
URF1020S URF1040S URF1060S  
PARAMETER  
SYMBOL  
UNIT  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
VRRM  
VRMS  
VDC  
200  
140  
200  
400  
280  
400  
600  
420  
600  
V
V
V
Maximum DC Blocking Voltage  
Maximum Average Forward Rectified  
Current Tc=100°C  
10.0  
125  
1.3  
IF(AV)  
IFSM  
VF  
A
A
V
(Total Device 2x5.0A=10.0A)  
Peak Forward Surge Current, 8.3ms single Half  
sine-wave superimposed on rated load (JEDEC  
method)  
Maximum Instantaneous Forward Voltage  
@5.0A  
0.98  
1.7  
(Per Diode/Per Leg)  
Maximum DC Reverse Current @TJ=25°C  
At Rated DC Blocking Voltage @TJ=125°C  
5.0  
100  
μA  
μA  
IR  
Maximum Reverse Recovery Time (Note1)  
Typical Junction Capacitance (Note 2)  
Typical Thermal Resistance (Note 3)  
35  
65  
Trr  
CJ  
nS  
pF  
3.0  
RθJC  
°C/W  
Operating Junction and Storage  
Temperature Range  
-55 to +150  
TJ,TSTG  
°C  
Note:(1)Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A.  
Note:(2)Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.  
Note:(3)Thermal Resistance junction to case.  
Page 1/2  
http://www.thinkisemi.com.tw/  
Rev.08T  
© 1995 Thinki Semiconductor Co., Ltd.  

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