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UPD75P4308GS-A PDF预览

UPD75P4308GS-A

更新时间: 2024-11-25 13:15:15
品牌 Logo 应用领域
日电电子 - NEC 微控制器
页数 文件大小 规格书
60页 265K
描述
Microcontroller, 4-Bit, OTPROM, 6MHz, MOS, PDSO36, 0.300 INCH, SHRINK, PLASTIC, SOP-36

UPD75P4308GS-A 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:0.300 INCH, SHRINK, PLASTIC, SOP-36Reach Compliance Code:compliant
风险等级:5.84具有ADC:NO
地址总线宽度:位大小:4
最大时钟频率:6 MHzDAC 通道:NO
DMA 通道:NO外部数据总线宽度:
JESD-30 代码:R-PDSO-G36JESD-609代码:e3/e6
长度:15.54 mmI/O 线路数量:30
端子数量:36最高工作温度:85 °C
最低工作温度:-40 °CPWM 通道:NO
封装主体材料:PLASTIC/EPOXY封装代码:SSOP
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, SHRINK PITCH
峰值回流温度(摄氏度):260认证状态:Not Qualified
ROM可编程性:OTPROM座面最大高度:1.8 mm
速度:6 MHz最大供电电压:5.5 V
最小供电电压:1.8 V标称供电电压:3 V
表面贴装:YES技术:MOS
温度等级:INDUSTRIAL端子面层:MATTE TIN/TIN BISMUTH
端子形式:GULL WING端子节距:0.8 mm
端子位置:DUAL处于峰值回流温度下的最长时间:10
宽度:5.6 mmuPs/uCs/外围集成电路类型:MICROCONTROLLER
Base Number Matches:1

UPD75P4308GS-A 数据手册

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DATA SHEET  
MOS INTEGRATED CIRCUIT  
µPD75P4308  
4-BIT SINGLE-CHIP MICROCONTROLLER  
The µPD75P4308 replaces the µPD754304’s internal mask ROM with a one-time PROM and features expanded  
ROM capacity.  
Because the µPD75P4308 supports programming by users, it is suitable for use in prototype testing for system  
development using the µPD754302 and 754304 products, and for use in small-lot production.  
Detailed descriptions of functions are provided in the following document. Be sure to read the document  
before designing.  
µPD754304 User’s Manual: U10123E  
FEATURES  
Compatible with µPD754304  
Memory capacity:  
· PROM : 8192 × 8 bits  
· RAM : 256 × 4 bits  
Can operate in the same power supply voltage as the mask version µPD754304  
· VDD = 1.8 to 5.5 V  
Adopts a compact shrink SOP package  
ORDERING INFORMATION  
Part Number  
Package  
µPD75P4308GS  
36-pin plastic shrink SOP (300 mil, 0.8 mm pitch)  
Caution On-chip pull-up resistors by mask option are not provided.  
The information in this document is subject to change without notice.  
Document No. U10909EJ2V0DS00 (2nd edition)  
Date Published January 1997 N  
Printed in Japan  
The mark  
shows major revised points.  
1996  
©

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