5秒后页面跳转
UPD4442322GF-A44CY PDF预览

UPD4442322GF-A44CY

更新时间: 2024-01-03 01:48:28
品牌 Logo 应用领域
瑞萨 - RENESAS 时钟静态存储器内存集成电路
页数 文件大小 规格书
28页 209K
描述
IC,SYNC SRAM,128KX32,CMOS,QFP,100PIN,PLASTIC

UPD4442322GF-A44CY 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
Reach Compliance Code:unknown风险等级:5.92
最长访问时间:2.8 ns最大时钟频率 (fCLK):225 MHz
I/O 类型:COMMONJESD-30 代码:R-PQFP-G100
JESD-609代码:e0内存密度:4194304 bit
内存集成电路类型:STANDARD SRAM内存宽度:32
端子数量:100字数:131072 words
字数代码:128000工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:128KX32输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:QFP
封装等效代码:QFP100,.63X.87封装形状:RECTANGULAR
封装形式:FLATPACK并行/串行:PARALLEL
电源:2.5/3.3,3.3 V认证状态:Not Qualified
最大待机电流:0.012 A最小待机电流:3.14 V
子类别:SRAMs最大压摆率:0.46 mA
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子节距:0.635 mm
端子位置:QUADBase Number Matches:1

UPD4442322GF-A44CY 数据手册

 浏览型号UPD4442322GF-A44CY的Datasheet PDF文件第2页浏览型号UPD4442322GF-A44CY的Datasheet PDF文件第3页浏览型号UPD4442322GF-A44CY的Datasheet PDF文件第4页浏览型号UPD4442322GF-A44CY的Datasheet PDF文件第5页浏览型号UPD4442322GF-A44CY的Datasheet PDF文件第6页浏览型号UPD4442322GF-A44CY的Datasheet PDF文件第7页 
PRELIMINARY DATA SHEET  
MOS INTEGRATED CIRCUIT  
µPD4442162-Y, 4442182-Y, 4442322-Y, 4442362-Y  
4M-BIT CMOS SYNCHRONOUS FAST SRAM  
PIPELINED OPERATION  
SINGLE CYCLE DESELECT  
Description  
The µPD4442162-Y is a 262,144-word by 16-bit, the µPD4442182-Y is a 262,144-word by 18-bit, µPD4442322-Y is  
a 131,072-word by 32-bit and the µPD4442362-Y is a 131,072-word by 36-bit synchronous static RAM fabricated with  
advanced CMOS technology using Full-CMOS six-transistor memory cell.  
The µPD4442162-Y, µPD4442182-Y, µPD4442322-Y and µPD4442362-Y integrates unique synchronous peripheral  
circuitry, 2-bit burst counter and output buffer as well as SRAM core. All input registers are controlled by a positive  
edge of the single clock input (CLK).  
The µPD4442162-Y, µPD4442182-Y, µPD4442322-Y and µPD4442362-Y are suitable for applications which require  
synchronous operation, high speed, low voltage, high density and wide bit configuration, such as cache and buffer  
memory.  
ZZ has to be set LOW at the normal operation. When ZZ is set HIGH, the SRAM enters Power Down State  
(“Sleep”). In the “Sleep” state, the SRAM internal state is preserved. When ZZ is set LOW again, the SRAM resumes  
normal operation.  
The µPD4442162-Y, µPD4442182-Y, µPD4442322-Y and µPD4442362-Y are packaged in 100-pin PLASTIC LQFP  
with a 1.4 mm package thickness for high density and low capacitive loading.  
Features  
3.3 V (A version) or 2.5 V (C version) Core Supply  
Synchronous operation  
Extended operating temperature (TA = –40 to +85 °C)  
Internally self-timed write control  
Burst read / write : Interleaved burst and linear burst sequence  
Fully registered inputs and outputs for pipelined operation  
Single-Cycle deselect timing  
All registers triggered off positive clock edge  
3.3 V or 2.5 V LVTTL Compatible : All inputs and outputs  
Fast clock access time : 2.5 ns (250 MHz), 2.8 ns (225 MHz), 3.0 ns (200 MHz), 3.5 ns (167 MHz)  
Asynchronous output enable : /G  
Burst sequence selectable : MODE  
Sleep mode : ZZ (ZZ = Open or Low : Normal operation)  
Separate byte write enable : /BW1 - /BW4 (µPD4442322-Y, µPD4442362-Y), /BW1 - /BW2 (µPD4442162-Y,  
µPD4442182-Y), /BWE  
Global write enable : /GW  
Three chip enables for easy depth expansion  
Common I/O using three state outputs  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No. M15503EJ2V0DS00 (2nd edition)  
Date Published May 2001 NS CP(K)  
Printed in Japan  
The mark ! shows major revised points.  
2001  
©

与UPD4442322GF-A44CY相关器件

型号 品牌 描述 获取价格 数据表
UPD4442322GF-A44Y RENESAS IC,SYNC SRAM,128KX32,CMOS,QFP,100PIN,PLASTIC

获取价格

UPD4442322GF-A50Y RENESAS Cache SRAM, 128KX32, 3ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, LQFP-100

获取价格

UPD4442322GF-A60CY RENESAS Cache SRAM, 128KX32, 3.5ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, LQFP-100

获取价格

UPD4442322GF-A60Y RENESAS Cache SRAM, 128KX32, 3.5ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, LQFP-100

获取价格

UPD4442361GF-A85 RENESAS IC,SYNC SRAM,128KX36,CMOS,QFP,100PIN,PLASTIC

获取价格

UPD4442361GF-C75 RENESAS IC,SYNC SRAM,128KX36,CMOS,QFP,100PIN,PLASTIC

获取价格