UPA2754GR

更新时间： 2024-01-08 16:22:54

品牌	Logo	应用领域
日电电子 - NEC		开关
页数	文件大小	规格书
7页	77K
描述
SWITCHING N-CHANNEL POWER MOSFET

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中文翻译

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UPA2754GR 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

µPA2754GR

SWITCHING

N-CHANNEL POWER MOS FET

DESCRIPTION

PACKAGE DRAWING (Unit: mm)

The µPA2754GR is Dual N-channel MOS Field Effect

Transistor designed for Li-ion battery protection circuit

and power management application.

: Source 1

: Gate 1

7, 8: Drain 1

FEATURES

• Dual chip type

• Low on-state resistance

: Source 2

: Gate 2

5, 6: Drain 2

R^DS(on)1= 14.5 mΩ MAX. (V^GS= 4.5 V, I^D= 5.5 A)

R^DS(on)2= 15.0 mΩ MAX. (V^GS= 4.0 V, I^D= 5.5 A)

R^DS(on)4= 18.6 mΩ MAX. (V^GS= 2.5 V, I^D= 5.5 A)

• Low C^iss: C^iss= 1940 pF TYP. (V^DS= 10 V, V^GS= 0 V)

• Built-in G-S protection diode

6.0 ±0.3

4.4

5.37 MAX.

0.8

• Small and surface mount package (Power SOP8)

0.5 ±0.2

0.10

1.27 0.78 MAX.

ORDERING INFORMATION

+0.10

–0.05

0.40

0.12 M

PART NUMBER

PACKAGE

µPA2754GR

Power SOP8

ABSOLUTE MAXIMUM RATINGS (T^A= 25°C, All terminals are connected.)

Drain to Source Voltage (V^GS= 0 V)

Gate to Source Voltage (V^DS= 0 V)

Drain Current (DC) ^Note2

V^DSS

V^GSS

I^D(DC)

I^D(pulse)

P^T

±12

EQUIVALENT CIRCUIT

(1/2 circuit)

±11

Drain Current (pulse) ^Note1

±88

Drain

Total Power Dissipation (2 units) ^Note2

Total Power Dissipation (1 unit) ^Note2

Channel Temperature

2.0

°C

P^T

1.7

Body

Diode

Tch

150

Gate

Storage Temperature

Single Avalanche Current ^Note3

Single Avalanche Energy ^Note3

Tstg

−55 to +150

Gate

I^AS

Protection

Diode

Source

E^AS

12.1

Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1%

2. T^A= 25°C, Mounted on ceramic substrate of 2000 mm²x 2.2 mm

3. Starting T^ch= 25°C, V^DD= 15 V, R^G= 25 Ω, V^GS= 12 → 0 V

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.

When this device actually used, an additional protection circuit is externally required if a voltage exceeding

the rated voltage may be applied to this device.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No. G15816EJ1V0DS00 (1st edition)

Date Published January 2003 NS CP(K)

Printed in Japan

2001

12 3 4 5 6 7

中文翻译

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与UPA2754GR相关器件

型号	品牌	获取价格	描述	数据表
UPA2754GR-A	NEC	获取价格	Power Field-Effect Transistor, 11A I(D), 30V, 0.0186ohm, 2-Element, N-Channel, Silicon, Me
UPA2754GR-A	RENESAS	获取价格	11A, 30V, 0.0186ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, POWER, SOP-8
UPA2754GR-E1-AT	RENESAS	获取价格	Nch Dual Power Mosfet 30V 11A 14.5Mohm Power Sop8, SOP, /Embossed Tape
UPA2754GR-E2	RENESAS	获取价格	UPA2754GR-E2
UPA2754GR-E2-AT	RENESAS	获取价格	TRANSISTOR,MOSFET,MATCHED PAIR,N-CHANNEL,30V V(BR)DSS,11A I(D),SO
UPA2755GR	NEC	获取价格	SWITCHING N-CHANNEL POWER MOSFET
UPA2756GR	NEC	获取价格	SWITCHING N-CHANNEL POWER MOSFET
UPA2756GR-A	RENESAS	获取价格	TRANSISTOR,MOSFET,MATCHED PAIR,N-CHANNEL,60V V(BR)DSS,4A I(D),SO
UPA2756GR-AT	RENESAS	获取价格	TRANSISTOR,MOSFET,MATCHED PAIR,N-CHANNEL,60V V(BR)DSS,4A I(D),SO
UPA2756GR-E1-AT	RENESAS	获取价格	TRANSISTOR,MOSFET,MATCHED PAIR,N-CHANNEL,60V V(BR)DSS,4A I(D),SO

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