是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Obsolete | 零件包装代码: | SOT |
包装说明: | SMALL OUTLINE, R-PDSO-G8 | 针数: | 8 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.2 | Is Samacsys: | N |
雪崩能效等级(Eas): | 12.1 mJ | 配置: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
最小漏源击穿电压: | 30 V | 最大漏极电流 (Abs) (ID): | 11 A |
最大漏极电流 (ID): | 11 A | 最大漏源导通电阻: | 0.0186 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-G8 |
JESD-609代码: | e0 | 元件数量: | 2 |
端子数量: | 8 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 2 W | 最大脉冲漏极电流 (IDM): | 88 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | YES | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
UPA2754GR-A | NEC |
获取价格 |
Power Field-Effect Transistor, 11A I(D), 30V, 0.0186ohm, 2-Element, N-Channel, Silicon, Me |
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UPA2754GR-A | RENESAS |
获取价格 |
11A, 30V, 0.0186ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, POWER, SOP-8 |
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UPA2754GR-E1-AT | RENESAS |
获取价格 |
Nch Dual Power Mosfet 30V 11A 14.5Mohm Power Sop8, SOP, /Embossed Tape |
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UPA2754GR-E2 | RENESAS |
获取价格 |
UPA2754GR-E2 |
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UPA2754GR-E2-AT | RENESAS |
获取价格 |
TRANSISTOR,MOSFET,MATCHED PAIR,N-CHANNEL,30V V(BR)DSS,11A I(D),SO |
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UPA2755GR | NEC |
获取价格 |
SWITCHING N-CHANNEL POWER MOSFET |
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UPA2756GR | NEC |
获取价格 |
SWITCHING N-CHANNEL POWER MOSFET |
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UPA2756GR-A | RENESAS |
获取价格 |
TRANSISTOR,MOSFET,MATCHED PAIR,N-CHANNEL,60V V(BR)DSS,4A I(D),SO |
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UPA2756GR-AT | RENESAS |
获取价格 |
TRANSISTOR,MOSFET,MATCHED PAIR,N-CHANNEL,60V V(BR)DSS,4A I(D),SO |
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UPA2756GR-E1-AT | RENESAS |
获取价格 |
TRANSISTOR,MOSFET,MATCHED PAIR,N-CHANNEL,60V V(BR)DSS,4A I(D),SO |
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