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UPA1722 PDF预览

UPA1722

更新时间: 2024-02-29 18:02:11
品牌 Logo 应用领域
日电电子 - NEC 开关
页数 文件大小 规格书
8页 67K
描述
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

UPA1722 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:SOT
包装说明:SMALL OUTLINE, R-PDSO-G8针数:8
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.21配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (Abs) (ID):9 A
最大漏极电流 (ID):9 A最大漏源导通电阻:0.032 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G8
JESD-609代码:e6元件数量:1
端子数量:8工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):2 W最大脉冲漏极电流 (IDM):36 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Tin/Bismuth (Sn98Bi2)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

UPA1722 数据手册

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DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
PA1722  
µ
SWITCHING  
N-CHANNEL POWER MOS FET  
INDUSTRIAL USE  
DESCRIPTION  
PACKAGE DRAWING (Unit : mm)  
The µPA1722 is N-Channel MOS Field Effect  
Transistor designed for DC/DC converters and power  
management applications of notebook computers.  
8
5
; Source  
; Gate  
1,2,3  
4
; Drain  
5,6,7,8  
FEATURES  
Low on-resistance  
DS(on)1  
R
DS(on)2  
R
DS(on)3  
R
GS  
D
= 21.0 mMAX. (V = 10 V, I = 4.5 A)  
6.0 ±0.3  
1
4
4.4  
GS  
D
= 29.0 mMAX. (V = 4.5 V, I = 4.5 A)  
5.37 MAX.  
0.8  
GS  
D
= 32.0 mMAX. (V = 4.0 V, I = 4.5 A)  
iss  
iss  
Low C : C = 980 pF TYP.  
Built-in G-S protection diode  
0.5 ±0.2  
0.10  
1.27 0.78 MAX.  
Small and surface mount package (Power SOP8)  
+0.10  
–0.05  
0.40  
0.12 M  
ORDERING INFORMATION  
PART NUMBER  
PACKAGE  
µPA1722G  
Power SOP8  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.)  
GS  
DSS  
Drain to Source Voltage (V = 0 V)  
V
V
30  
±20  
±9  
V
V
EQUIVALENT CIRCUIT  
DS  
GSS  
Gate to Source Voltage (V = 0 V)  
D(DC)  
Drain Current (DC)  
I
A
Drain  
Drain Current (pulse) Note1  
D(pulse)  
I
±36  
2.0  
150  
A
Note2  
A
Total Power Dissipation (T = 25°C)  
T
P
W
°C  
Body  
Diode  
ch  
T
Channel Temperature  
Storage Temperature  
Gate  
stg  
T
–55 to +150 °C  
Gate  
Protection  
Diode  
Notes 1. PW 10 µs, Duty Cycle 1 %  
2. Mounted on ceramic substrate of 1200 mm2 x 2.2 mm  
Source  
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.  
When this device actually used, an additional protection circuit is externally required if a voltage  
exceeding the rated voltage may be applied to this device.  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No.  
G13890EJ1V0DS00 (1st edition)  
Date Published November 1999 NS CP(K)  
Printed in Japan  
The mark shows major revised points.  
1998, 1999  
©

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