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UP0431MG

更新时间： 2024-01-13 19:17:26
品牌 Logo 应用领域
松下 - PANASONIC 开关光电二极管晶体管
页数 文件大小 规格书
6页 656K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon, ROHS COMPLIANT, SSMINI6-F2, 6 PIN

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UP0431MG 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：SMALL OUTLINE, R-PDSO-F6针数：6
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.21.00.75风险等级：5.82
其他特性：BUILT-IN BIAS RESISTANCE RATIO IS 21.27最大集电极电流 (IC)：0.1 A
集电极-发射极最大电压：50 V配置：SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)：80JESD-30 代码：R-PDSO-F6
元件数量：2端子数量：6
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：NPN AND PNP认证状态：Not Qualified
表面贴装：YES端子形式：FLAT
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
标称过渡频率 (fT)：150 MHzBase Number Matches：1

UP0431MG 数据手册

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This product complies with the RoHS Directive (EU 2002/95/EC).  
Composite Transistors  
UP0431MG  
Silicon NPN epitaxial planar type (Tr1)  
Silicon PNP epitaxial planar type (Tr2)  
For digital circuits  
Features  
Package  
Two elements incorporated into one package (transistors with built-in resistor)  
Reduction of the mounting area and assembly cost by one half.  
ꢀCode  
SSMini6-F2  
ꢀPin Name  
1: mitter (Tr1)  
(Tr1)  
or (Tr2)  
Basic Part Number  
ꢀUNR211M + UNR221M  
4: Emitter (Tr2)  
5: Base (Tr2)  
6: Collector (Tr1)  
Absolute Maximum Ratings T = 25°C  
a
Marking Symbol: 8C  
Parameter  
Symbol  
VBO  
VCEO  
IC  
Rating  
50  
Unt  
V
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Collector current  
Internal Connection  
Tr1  
Tr2  
50  
V
(C1)  
6
(B2)  
5
(E2)  
4
100  
mA  
V
R1  
Collector-base voltage (mitter pen)  
Collector-emitter vltag(Base open)  
Collector current  
VCBO  
VCO  
IC  
–50  
22 kΩ  
R2  
47 kΩ  
Tr1  
–50  
V
R2  
47 kΩ  
Tr2  
–100  
125  
mA  
mW  
°C  
°C  
R1  
22 kΩ  
Total power dissiation  
1
2
3
Overall unction teture  
Sorae temrature  
125  
(E1)  
(B1)  
(C2)  
T
stg  
–55 to +125  
ꢀElecrical Chaistics T = 25°C±3°C  
a
ꢀTr1  
Par
Collector-base voltage (Eitter open)  
Collector-emitter voltage (Base open)  
Collector-base cutoff current (Emitter open)  
Collector-emitter cutoff current (Base open)  
Emitter-base cutoff current (Collector open)  
Forward current transfer ratio  
Collector-emitter saturation voltage  
Output voltage high-level  
Symbol  
Conditions  
Min  
Typ  
Max  
Unit  
V
VCBO IC = 10 µA, IE = 0  
50  
50  
VCEO IC = 2 mA, IB = 0  
V
ICBO  
ICEO  
IEBO  
hFE  
VCB = 50 V, IE = 0  
VCE = 50 V, IB = 0  
VEB = 6 V, IC = 0  
0.1  
0.5  
0.2  
µA  
µA  
mA  
VCE = 10 V, IC = 5 mA  
80  
4.9  
VCE(sat) IC = 10 mA, IB = 0.3 mA  
0.25  
V
VOH  
VOL  
R1  
VCC = 5 V, VB = 0.5 V, RL = 1 kW  
V
Output voltage low-level  
VCC = 5 V, VB = 2.5 V, RL = 1 kW  
0.2  
V
Input resistance  
2.2  
0.047  
150  
kW  
-30%  
+30%  
Resistance ratio  
R1 / R2  
fT  
Transition frequency  
VCB = 10 V, IE = –2 mA, f = 200 MHz  
MHz  
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
Publication date: November 2008  
SJJ00420AED  
1
123456

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