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UN511HH PDF预览

UN511HH

更新时间: 2024-11-18 13:15:11
品牌 Logo 应用领域
松下 - PANASONIC 晶体小信号双极晶体管开关光电二极管
页数 文件大小 规格书
17页 236K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon

UN511HH 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.84
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:50 V
配置:SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):30
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:PNP
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

UN511HH 数据手册

 浏览型号UN511HH的Datasheet PDF文件第2页浏览型号UN511HH的Datasheet PDF文件第3页浏览型号UN511HH的Datasheet PDF文件第4页浏览型号UN511HH的Datasheet PDF文件第5页浏览型号UN511HH的Datasheet PDF文件第6页浏览型号UN511HH的Datasheet PDF文件第7页 
Transistors with built-in Resistor  
UN5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/  
511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z  
Silicon PNP epitaxial planer transistor  
Unit: mm  
For digital circuits  
2.1±0.1  
0.425  
1
1.25±0.1  
0.425  
Features  
Costs can be reduced through downsizing of the equipment and  
reduction of the number of parts.  
S-Mini type package, allowing automatic insertion through tape  
3
packing and magazine packing.  
2
Resistance by Part Number  
Marking Symbol (R1)  
(R2)  
10k  
22kΩ  
47kΩ  
47kΩ  
5.1kΩ  
10kΩ  
10kΩ  
22kΩ  
10kΩ  
10kΩ  
4.7kΩ  
47kΩ  
47kΩ  
47kΩ  
2.2kΩ  
22kΩ  
UN5111  
UN5112  
UN5113  
UN5114  
UN5115  
UN5116  
UN5117  
UN5118  
UN5119  
UN5110  
UN511D  
UN511E  
UN511F  
UN511H  
UN511L  
UN511M  
UN511N  
UN511T  
UN511V  
UN511Z  
6A  
6B  
6C  
6D  
6E  
6F  
10kΩ  
22kΩ  
47kΩ  
10kΩ  
10kΩ  
4.7kΩ  
22kΩ  
0.51Ω  
1kΩ  
47kΩ  
47kΩ  
47kΩ  
4.7kΩ  
2.2kΩ  
4.7kΩ  
2.2kΩ  
4.7kΩ  
22kΩ  
2.2kΩ  
4.7kΩ  
0.2±0.1  
1 : Base  
2 : Emitter  
3 : Collector  
EIAJ : SC–70  
S–Mini Type Package  
6H  
6I  
Internal Connection  
6K  
6L  
6M  
6N  
6O  
6P  
6Q  
EI  
EW  
EY  
FC  
FE  
C
E
R1  
B
R2  
Absolute Maximum Ratings (Ta=25˚C)  
Parameter  
Symbol  
VCBO  
VCEO  
IC  
Ratings  
–50  
Unit  
V
Collector to base voltage  
Collector to emitter voltage  
Collector current  
–50  
V
–100  
mA  
mW  
˚C  
Total power dissipation  
Junction temperature  
Storage temperature  
PT  
150  
Tj  
150  
Tstg  
–55 to +150  
˚C  
1

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