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UN4112 PDF预览

UN4112

更新时间: 2024-01-20 18:40:35
品牌 Logo 应用领域
松下 - PANASONIC 晶体晶体管
页数 文件大小 规格书
13页 182K
描述
Silicon PNP epitaxial planer transistor

UN4112 数据手册

 浏览型号UN4112的Datasheet PDF文件第2页浏览型号UN4112的Datasheet PDF文件第3页浏览型号UN4112的Datasheet PDF文件第4页浏览型号UN4112的Datasheet PDF文件第5页浏览型号UN4112的Datasheet PDF文件第6页浏览型号UN4112的Datasheet PDF文件第7页 
Transistors with built-in Resistor  
UN4111/4112/4113/4114/4115/4116/4117/4118/  
4119/4110/411D/411E/411F/411H/411L  
Silicon PNP epitaxial planer transistor  
Unit: mm  
For digital circuits  
4.0±0.2  
Features  
Costs can be reduced through downsizing of the equipment and  
reduction of the number of parts.  
New S type package, allowing supply with the radial taping.  
marking  
Resistance by Part Number  
1
2
3
(R1)  
10k  
22kΩ  
47kΩ  
10kΩ  
10kΩ  
4.7kΩ  
22kΩ  
0.51kΩ  
1kΩ  
(R2)  
10kΩ  
22kΩ  
47kΩ  
47kΩ  
UN4111  
UN4112  
UN4113  
UN4114  
UN4115  
UN4116  
UN4117  
UN4118  
UN4119  
UN4110  
UN411D  
UN411E  
UN411F  
UN411H  
UN411L  
1.27 1.27  
2.54±0.15  
1 : Emitter  
2 : Collector  
3 : Base  
New S Type Package  
5.1kΩ  
10kΩ  
10kΩ  
22kΩ  
10kΩ  
10kΩ  
4.7kΩ  
Internal Connection  
47kΩ  
47kΩ  
47kΩ  
4.7kΩ  
2.2kΩ  
4.7kΩ  
C
E
R1  
B
R2  
Absolute Maximum Ratings (Ta=25˚C)  
Parameter  
Symbol  
VCBO  
VCEO  
IC  
Ratings  
–50  
Unit  
V
Collector to base voltage  
Collector to emitter voltage  
Collector current  
–50  
V
–100  
mA  
mW  
˚C  
Total power dissipation  
Junction temperature  
Storage temperature  
PT  
300  
Tj  
150  
Tstg  
–55 to +150  
˚C  
1

UN4112 替代型号

型号 品牌 替代类型 描述 数据表
MUN2237T1G ONSEMI

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